Speaker: Dr. Krista R Khiangte, Department of Physics, Banaras Hindu University, Varanasi
Abstract:
In this talk I will discuss about molecular beam epitaxy of Group IV heterostructures with a global aim of realizing Group – IV based photonics devices. I will include growth and engineering strain relaxation of Ge and GeSn epilayers on Si substrates. In parallel I will discuss all-epitaxial GeOI and GeSnOI templates, with the sesquioxide of Gadolinium (Gd2O3) as the insulator on Si substrates. Epitaxy of dissimilar materials, Ge on c – plane sapphire will also be discussed.
Bio :
Krista had done his Master and Doctoral studies from Physics Department, IIT Bombay. In post – PhD, after working as a Research Associate in Centre for Excellence in Nanoelectronics, IIT Bombay he joined Institute for Nanoscience and Engineering, University of Arkansas at Fayetteville, United States as a postdoctoral fellow. Currently he is working as Assistant Professor in the Department of Physics, Banaras Hindu University since 2020.
Host Faculty : Prof. Manoj Varma, CeNSE