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BaBiO3: A potential absorber for all-oxide photovoltaics

TitleBaBiO3: A potential absorber for all-oxide photovoltaics
Publication TypeJournal Article
Year of Publication2018
AuthorsChouhan, ASingh, Athresh, E, Ranjan, R, Raghavan, S, Avasthi, S
JournalMaterials Letters
KeywordsEnergy-band offset, photovoltaics, Thin-filmOxide, XPS

BaBiO3 is presented as a potential absorber for all-oxide solar cells. Thin-films of BaBiO3 were deposited by pulsed laser deposition. As-deposited thin-films were amorphous, but a rapid thermal anneal at 600 °C for 10 min yields polycrystalline thin-films. X-ray photoelectron spectroscopy measurements show that deposited films have Barium in Ba+2 state and bismuth in both Bi+3 and Bi+5 state. UV–Vis spectrophotometer (UV–Vis) shows that BaBiO3 films have direct and indirect bandgap (Eg) of 2.25 eV and 2.02 eV respectively, while ultraviolet photoelectron spectroscopy (UPS) shows that valence band maxima (EV), conduction band minima (EC) and work-function (ϕ) of BaBiO3 is at 5.82 eV, 3.8 eV and 4.22 eV respectively. BaBiO3 thin-film devices with a FTO/c-TiO2/BaBiO3/Au structure show rectifying current–voltage characteristics in dark. Under illumination, a photo response with a Jlight/Jdark ratio of 1.75 is observed.