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Polarization-Engineered GaN-based Heterostructure for Normally-Off High Electron Mobility Transistors

TitlePolarization-Engineered GaN-based Heterostructure for Normally-Off High Electron Mobility Transistors
Publication TypeJournal Article
Year of Publication2012
AuthorsKim, H, Nath, DN, Lu, W, Rajan, S
JournalJournal of Electronics Materials
Volume42
Pagination10-14