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A Wide-Band Receiver Front-End with Programmable Frequency Selective Input Matching

TitleA Wide-Band Receiver Front-End with Programmable Frequency Selective Input Matching
Publication TypeConference Paper
Year of Publication2016
AuthorsLenka, MK, Agrawal, A, Khatri, V, Banerjee, G
Conference Name2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID)
Date PublishedJan
Keywordsbandwidth 5 MHz, circuit feedback, CMOS integrated circuits, CMOS process, complex feedback resistors, effective antenna impedance, ESD pads, field effect MMIC, frequency 0.4 GHz to 4 GHz, frequency translational receiver, gain 3.5 dB, gain 36 dB, global feedback resistors, Impedance, impedance matching, Impedance tuning, inductorless receiver, Low-noise, microwave amplifiers, Mixers, N-path mixer, package bond wires, PCB, programmable frequency selective input matching, Radio frequency, radio receivers, Receivers, resistive feedback LNA, resistive feedback receiver, Resistors, S11 centering, size 65 nm, software-defined-radio (SDR), Tuning, UHF amplifiers, wide band receiver front end, wideband receiver, wideband wireless receiver

While wide-band wireless receivers are most often designed to match a constant, purely real antenna impedance of 50 O, in reality, the actual impedance of an antenna can vary widely at different operating frequencies and in different frequency environments. Additionally, the parasitics on the PCB, package bond wires and ESD pads inherently make the effective antenna impedance complex. This results in poor matching (S11) at the receiver's input. The problem gets exacerbated in the higher end of the frequency band of the receiver. In this paper, we present an inductor-less, frequency translational resistive feedback receiver front-end, operating from 0.4 to 4 GHz. This receiver can be considered as a frequency translational version of a resistive feedback LNA. However unlike the LNA, the input match around the LO in the desired signal bandwidth is achieved by varying only the base-band components: a) by varying the global feedback resistors and b) varying the "complex" feedback resistors between the I and the Q paths. With these two degrees of freedom, the receiver designed in a 65-nm CMOS process, achieves at least-15 dBm S11 in a signal bandwidth of 5 MHz at 4 GHz LO, with a negligible frequency shift of the receiver conversion gain. Simulation results show that the receiver front-end with two base band gain stages has a gain of 36 dB and a worst-case noise figure of 3.5 dB.

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