Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. ,
“III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)”, in
High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. ,
“Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”,
Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. ,
“Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”,
Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. ,
“Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”,
Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. ,
“Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”,
Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. ,
“Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”,
Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. ,
“Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”,
Applied Physics Letters, vol. 102, p. 072105, 2013.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”,
IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. ,
“Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. ,
“Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”,
Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.