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Publications

Found 194 results
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Journal Article
B. N. Shivananju, Yamdagni, S. , Fazuldeen, R. , Kumar, A. K. S. , Nithin, S. P. , Varma, M. M. , and Asokan, S. , Highly Sensitive Carbon Nanotubes Coated Etched Fiber Bragg Grating Sensor for Humidity Sensing, IEEE Sensors Journal, vol. 14, pp. 2615-2619, 2014.
U. Ul Muazzam, M Raghavan, S. , Pratiyush, A. Singh, Muralidharan, R. , Raghavan, S. , Nath, D. N. , and Shivashankar, S. A. , High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition, Journal of Alloys and Compounds, vol. 828, p. 154337, 2020.
K. B. Vinayakumar, Kulkarni, P. G. , Nayak, M. M. , Dinesh, N. S. , Hegde, G. M. , Ramachandra, S. G. , and Rajanna, K. , A hollow stainless steel microneedle array to deliver insulin to a diabetic rat, Journal of Micromechanics and Microengineering, vol. 26, p. 065013, 2016.
A. Roychowdhury, Nandy, A. , Jog, C. S. , and Pratap, R. , Hybrid elements for modeling squeeze film effects coupled with structural interactions in vibratory MEMS devices, CMES: Computer Modeling in Engineering and Sciences, vol. 103, pp. 91-110, 2014.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111), Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity, arXiv preprint arXiv:2106.12899, 2021.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
A. Z. Subramanian, Neutens, P. , Dhakal, A. , Jansen, R. , Claes, T. , Rottenberg, X. , Peyskens, F. , Selvaraja, S. K. , Helin, P. , Dubois, B. , Leyssens, K. , Severi, S. , Deshpande, P. , Baets, R. , and Van Dorpe, P. , Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532-900 nm Wavelength Window Fabricated Within a CMOS Pilot Line, Photonics Journal, IEEE, vol. 5, p. 2202809, 2013.
A. Kalra, Rathkanthiwar, S. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes, Semiconductor Science and Technology, vol. 35, p. 035001, 2020.
S. Kumar, Bin Dolmanan, S. , Tripathy, S. , Muralidharan, R. , and Nath, D. Neelim, Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors, physica status solidi (a), vol. 217, p. 1900766, 2020.
J. Reddy, Chaman, J. J. , Pradeep, K. , Nayak, M. M. , and Pratap, R. , A method for realizing robust micro-scale electromagnetic actuators for high current density applications, ISSS Journal of Micro and Smart Systems, pp. 1–6, 2021.
P. Jaiswal, Muazzam, U. Ul, Pratiyush, A. Singh, Mohan, N. , Raghavan, S. , Muralidharan, R. , Shivashankar, S. A. , and Nath, D. N. , Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics, Applied Physics Letters, vol. 112, p. 021105, 2018.
K. P. Nagarjun, Raj, P. , Jeyaselvan, V. , Selvaraja, S. Kumar, and Supradeepa, V. R. , Microwave power induced resonance shifting of silicon ring modulators for continuously tunable, bandwidth scaled frequency combs, Optics Express, vol. 28, pp. 13032–13042, 2020.
S. Benedict, Singh, M. , Naik, T. R. Ravikumar, Shivashankar, S. A. , and Bhat, N. , Microwave-Synthesized NiO as a Highly Sensitive and Selective Room-Temperature NO2 Sensor, ECS Journal of Solid State Science and Technology, vol. 7, pp. Q3143–Q3147, 2018.
D. N. Nath, Gur, E. , Ringel, S. A. , and Rajan, S. , Molecular Beam Epitaxy of N-polar InGaN, Applied Physics Letters, vol. 97, p. 071903, 2010.

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