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Publications

Found 363 results
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I. Raja, Banerjee, G. , Zeidan, M. A. , and Abraham, J. A. , A 0.1 #x2013;3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, pp. 1975-1983, 2016.
V. Khatri and Banerjee, G. , A 0.25-3.25-GHz Wideband CMOS-RF Spectrum Sensor for Narrowband Energy Detection, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. PP, pp. 1-12, 2016.
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N. Sakhuja, Jha, R. Kumar, Chaurasiya, R. , Dixit, A. , and Bhat, N. , 1T-Phase Titanium Disulfide Nanosheets for Sensing H2S and O2, ACS Applied Nano Materials, vol. 3, pp. 3382–3394, 2020.
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R. Kumar Jha, Sakhuja, N. , and Bhat, N. , 2D Nano Materials for CMOS compatible Gas Sensors, in 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 2019.
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J. S. Gaggatur, Dixena, P. K. , and Banerjee, G. , A 3.2 mW 0.13 ¿¿m high sensitivity frequency-domain CMOS capacitance interface, in 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, pp. 1070-1073.
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R. G. D. Jeyasingh, Bhat, N. , and Amrutur, B. , Adaptive Keeper Design for Dynamic Logic Circuits Using Rate Sensing Technique, IEEE Transactions on VLSI Systems, 2009.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. , Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors, IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. , Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors, IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.
R. Lathia, Nampoothiri, K. Narayanan, Sagar, N. , Bansal, S. , Modak, C. Dey, and Sen, P. , Advances in Microscale Droplet Generation and Manipulation, Langmuir, 2023.
B. Bansal, Dixit, V. K. , Venkataraman, V. , and Bhat, H. L. , Alloying induced degradation of the absorption edge of InAsxSb1 x, Appl. Phys. Lett., vol. 90, p. 101905, 2007.
B. Bansal, Dixit, V. K. , Venkataraman, V. , and Bhat, H. L. , Alloying induced degradation of the absorption edge of InAsxSb1 x, Appl. Phys. Lett., vol. 90, p. 101905, 2007.
R. Jha, Nanda, A. , and Bhat, N. , Ammonia Sensing Performance of RGO-Based Chemiresistive Gas Sensor Decorated With Exfoliated MoSe 2 Nanosheets, IEEE Sensors Journal, vol. 21, pp. 10211–10218, 2021.
N. Bhat and Thakur, C. S. , Analog CMOS Performance Degradation due to Edge Direct Tunneling (EDT) Current in sub-100nm Technology, Journal of Semiconductor Technology and Science, 2003.
G. Banerjee, Behera, M. , Zeidan, M. A. , Chen, R. , and Barnett, K. , Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS, IEEE Journal of Solid-State Circuits, vol. 46, pp. 1998-2008, 2011.
G. Banerjee, Behera, M. , Zeidan, M. A. , Chen, R. , and Barnett, K. , Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS, IEEE Journal of Solid-State Circuits, vol. 46, pp. 1998-2008, 2011.
G. Banerjee, Behera, M. , Zeidan, M. A. , Chen, R. , and Barnett, K. , Analog/RF Built-in-Self-Test Subsystem for a Mobile Broadcast Video Receiver in 65-nm CMOS, IEEE Journal of Solid-State Circuits, vol. 46, pp. 1998-2008, 2011.
K. Maitra and Bhat, N. , Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal oxide semiconductor field-effect transistors, Journal of Applied Physics, vol. 93, pp. 1064–1068, 2003.
B. P. Harish, Bhat, N. , and Patil, M. B. , Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes, Solid State Electronics, vol. 50, pp. 1252-1260, 2006.
J. Sukumar and Bhat, N. , On Analyzing MEMS Based Multiple Energy Domain VLSI Circuits, Journal of Computational and Theoretical Nanoscience, vol. 12, pp. 4459–4466, 2015.
A. Gupta and Bhat, N. , Asymmetric Cross-Coupled Differential Pair Configuration to Realize Neuron Activation Function and its Derivative, IEEE Transactions on Circuits and Systems Part II: Express Briefs, vol. 52, pp. 10–13, 2005.
M. A. Zeidan, Banerjee, G. , and Abraham, J. A. , “Asynchronous Measurement of Transient Phase Shift Resulting from RF Receiver State Change”, IEEE Trans. Circuits and Systems , vol. 60, no. 10, pp. 2740–2751, 2013.
B. W. Wang, Dumon, P. , Selvaraja, S. K. , Teng, J. , Pathak, S. , Han, X. , JinyanWang, X. Jian, Zhao, M. , Baets, R. , and Morthier, G. , Athermal AWGs in SOI by overlaying a polymer cladding on narrowed arrayed waveguides, Applied Optics, vol. 51, pp. 1251–1256, 2012.
S. Bansal and Sen, P. , Axisymmetric and Nonaxisymmetric Oscillations of Sessile Compound Droplets in an Open Digital Microfluidic Platform, Langmuir, vol. 33, pp. 11047–11058, 2017.
V. Kumar, Kashyap, D. M. Nikhila, Hebbar, S. , Swetha, R. , Prasad, S. , Kamala, T. , Srikanta, S. S. , Krishnaswamy, P. R. , and Bhat, N. , Aza-heterocyclic receptors for direct electron transfer hemoglobin biosensor, Scientific Reports, vol. 7, p. 42031, 2017.
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A. Gupta and Bhat, N. , Back-Gate Effect to Generate Derivative of Neuron Activation Function, Analog Integrated Circuits and Signal Processing, vol. 41, pp. 89–92, 2004.

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