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Publications

Found 266 results
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S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. , 20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings, Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.
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H. S. Kotian, Abdulla, A. Z. , Hithysini, K. N. , Harkar, S. , Joge, S. , Mishra, A. , Singh, V. , and Varma, M. M. , Active modulation of surfactant-driven flow instabilities by swarming bacteria, Physical Review E, vol. 101, p. 012407, 2020.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. , Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors, IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.
S. Talukder, Gogoi, B. , Kumar, P. , Pratap, R. , Maoz, R. , and Sagiv, J. , Advanced Nanopatterning Using Scanning Probe Technology, Materials Today: Proceedings, vol. 18, pp. 740–743, 2019.
R. Lathia, Nampoothiri, K. Narayanan, Sagar, N. , Bansal, S. , Modak, C. Dey, and Sen, P. , Advances in Microscale Droplet Generation and Manipulation, Langmuir, 2023.
S. Rathkanthiwar, Kalra, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , Analysis of screw dislocation mediated dark current in Al 0.50 Ga 0.50 N solar-blind metal-semiconductor-metal photodetectors, Journal of Crystal Growth, 2018.
K. Maitra and Bhat, N. , Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal oxide semiconductor field-effect transistors, Journal of Applied Physics, vol. 93, pp. 1064–1068, 2003.
S. S. Mohite, V. Kesari, H. , Sonti, R. , and Pratap, R. , Analytical Solutions for the Stiffness and Damping Co-efficients of Squeeze Films in MEMS Devices Having Perforated Back Plate, Journal of Micromechanics and Microengineering, vol. 15, 2005.
A. Ghosh, Mandal, P. , Karmakar, S. , and Ghosh, A. , Analytical theory and stability analysis of an elongated nanoscale object under external torque, Physical Chemistry Chemical Physics, vol. 15, pp. 10817–10823, 2013.
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. , An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition, RSC Advances, vol. 11, pp. 36901–36912, 2021.
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. , An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition, RSC Advances, vol. 11, pp. 36901–36912, 2021.
B. W. Wang, Dumon, P. , Selvaraja, S. K. , Teng, J. , Pathak, S. , Han, X. , JinyanWang, X. Jian, Zhao, M. , Baets, R. , and Morthier, G. , Athermal AWGs in SOI by overlaying a polymer cladding on narrowed arrayed waveguides, Applied Optics, vol. 51, pp. 1251–1256, 2012.
I. Guiney, Humphreys, C. J. , Sen, P. , Muralidharan, R. , Nath, D. N. , and , , Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme, JVSTB, vol. 38, p. 032207, 2020.
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A. Goyal, Kapoor, A. K. , Raman, R. , Dalal, S. , Mohan, P. , and Muralidharan, R. , Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures, J. Appl. Phys., vol. 117, p. 225702, 2015.
A. Goyal, Kapoor, A. K. , Raman, R. , Dalal, S. , Mohan, P. , and Muralidharan, R. , Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures, J. Appl. Phys., vol. 117, p. 225702, 2015.
K. Majumdar and Bhat, N. , Bandstructure Effects in Ultra-Thin-Body Double-Gate Field Effect Transistor: A Fullband Analysis, Journal of Applied Physics, vol. 103, pp. 114503-114503-9, 2008.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. , BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask, IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. , BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask, IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
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R. Mudachathi, Shivananju, B. N. , Prashanth, G. R. , Asokan, S. , and Varma, M. M. , Calibration of Etched Fiber Bragg Grating Sensor Arrays for Measurement of Molecular Surface Adsorption, Journal of Lightwave Technology, vol. 31, pp. 2400-2406, 2013.
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. , A cantilever resonator with integrated actuation and sensing fabricated using a single step lithography, IEEE Sensors Journal, vol. 13, 2013.
A. Ghosh and Maris, H. , Cavitation in superfluid helium possibly arising from penning ionization of dimers, Journal of Low Temperature Physics, vol. 134, 2004.
S. Mohan, Bhat, N. , Pratap, R. , Jamadagni, H. S. , Vasi, J. M. , Rao, V. R. , Kottantharayil, A. , Shivashankar, S. A. , Ananthasuresh, G. K. , Contractor, A. Q. , Venkataraman, V. , and Vinoy, K. J. , Centers of Excellence in Nanoelectronics in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-4.
B. Sethumadhavan, Yao, W. , Eguchi, H. , Ghosh, A. , Huang, Y. H. , Kim, Y. H. , Lanou, R. E. , Maris, H. J. , Mocharnuk-Macchia, A. N. , and Seidel, G. M. , Charge Transport in Liquid Helium at Low Temperatures, AIP Conf. Proc., vol. 850, 2006.
B. Sethumadhavan, Yao, W. , Eguchi, H. , Ghosh, A. , Huang, Y. H. , Kim, Y. H. , Lanou, R. E. , Maris, H. J. , Mocharnuk-Macchia, A. N. , and Seidel, G. M. , Charge Transport in Liquid Helium at Low Temperatures, AIP Conf. Proc., vol. 850, 2006.
S. Venkataramanababu, Nair, G. , Deshpande, P. , Jithin, M. A. , Mohan, S. , and Ghosh, A. , Chiro-plasmonic refractory metamaterial with titanium nitride (TiN) core–shell nanohelices, Nanotechnology, vol. 29, p. 255203, 2018.

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