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Publications

Found 5 results
Author Title [ Type(Desc)] Year
Filters: Keyword is aluminium compounds  [Clear All Filters]
Conference Paper
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Determination of trap energy levels in AlGaN/GaN HEMT, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
A. Kalra, Rathkanthiwar, S. , Remesh, N. , Muralidharan, R. , Nath, D. , and Raghavan, S. , Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon, in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , Lateral energy band engineering of Al2O3/III-nitride interfaces, in 72nd Device Research Conference, 2014, pp. 131-132.
T. A. Growden, Krishnamoorthy, S. , Nath, D. N. , Ramesh, A. , Rajan, S. , and Berger, P. R. , Methods for attaining high interband tunneling current in III-Nitrides, in Device Research Conference (DRC), 2012 70th Annual, 2012, pp. 163-164.
Journal Article
P. S. Park, Nath, D. N. , and Rajan, S. , Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures, IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.