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Publications

Found 15 results
Author Title Type [ Year(Asc)]
Filters: Keyword is wide band gap semiconductors  [Clear All Filters]
2023
A. Gowrisankar, Charan, V. Sai, Chandrasekar, H. , Venugopalarao, A. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , “Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications”, IEEE Transactions on Electron Devices, 2023.
R. Baby, Reshma, K. , Chandrasekar, H. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , “Study of TaN-gated p-GaN E-mode HEMT”, IEEE Transactions on Electron Devices, vol. 70, pp. 1607–1612, 2023.
2020
A. Kalra, Rathkanthiwar, S. , Remesh, N. , Muralidharan, R. , Nath, D. , and Raghavan, S. , “Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon”, in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020.
2019
S. Dutta Gupta, Soni, A. , Joshi, V. , Kumar, J. , Sengupta, R. , Khand, H. , Shankar, B. , Mohan, N. , Raghavan, S. , Bhat, N. , and , , “Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By $${$$\backslash$mathrm ${$Al$}$$}$ _ ${$x$}$${$$\backslash$mathrm ${$Ti$}$$}$ _ ${$1-x$}$ $ O Based Gate Stack Engineering”, IEEE Transactions on Electron Devices, vol. 66, pp. 2544–2550, 2019.
2017
S. Kumar, Gupta, P. , Guiney, I. , Humphreys, C. J. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer”, IEEE Transactions on Electron Devices, vol. 64, pp. 4868–4874, 2017.
2015
P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. , “Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs”, IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.
2014
E. W. Lee, Ma, L. , Nath, D. N. , Lee, C. H. , Wu, Y. , and Rajan, S. , “Demonstration of 2D/3D p-MoS2/n-SiC junction”, in 72nd Device Research Conference, 2014, pp. 79-80.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , “Lateral energy band engineering of Al2O3/III-nitride interfaces”, in 72nd Device Research Conference, 2014, pp. 131-132.
2013
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Determination of trap energy levels in AlGaN/GaN HEMT”, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
S. Joshi, Nayak, M. M. , and Rajanna, K. , “Distributed piezoelectric Thin Film Sensor Array for monitoring impact events”, in SENSORS, 2013 IEEE, 2013, pp. 1-4.
2012
S. Joshi, Nayak, M. M. , and Rajanna, K. , “Flexible phynox alloy with integrated piezoelectric thin film for micro actuation application”, in Sensors, 2012 IEEE, 2012, pp. 1-4.
S. Ghoshal and Kumar, P. S. A. , “Magneto-Transport Study of Pure and Co Doped ZnO Thin Films”, IEEE Transactions on Magnetics, vol. 48, pp. 3426-3429, 2012.
T. A. Growden, Krishnamoorthy, S. , Nath, D. N. , Ramesh, A. , Rajan, S. , and Berger, P. R. , “Methods for attaining high interband tunneling current in III-Nitrides”, in Device Research Conference (DRC), 2012 70th Annual, 2012, pp. 163-164.
P. S. Park, Nath, D. N. , and Rajan, S. , “Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures”, IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.