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Publications

Found 10 results
Author Title Type [ Year(Desc)]
Filters: Keyword is Aluminum gallium nitride  [Clear All Filters]
2012
P. S. Park, Nath, D. N. , and Rajan, S. , “Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures”, IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.
2013
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Determination of trap energy levels in AlGaN/GaN HEMT”, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
2014
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , “Lateral energy band engineering of Al2O3/III-nitride interfaces”, in 72nd Device Research Conference, 2014, pp. 131-132.
2015
Z. Yang, Nath, D. N. , Zhang, Y. , Khurgin, J. B. , and Rajan, S. , “Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”, IEEE Electron Device Letters, vol. 36, pp. 436-438, 2015.
P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. , “Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs”, IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.
2017
S. Kumar, Gupta, P. , Guiney, I. , Humphreys, C. J. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer”, IEEE Transactions on Electron Devices, vol. 64, pp. 4868–4874, 2017.
2019
S. Dutta Gupta, Soni, A. , Joshi, V. , Kumar, J. , Sengupta, R. , Khand, H. , Shankar, B. , Mohan, N. , Raghavan, S. , Bhat, N. , and , , “Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By $${$$\backslash$mathrm ${$Al$}$$}$ _ ${$x$}$${$$\backslash$mathrm ${$Ti$}$$}$ _ ${$1-x$}$ $ O Based Gate Stack Engineering”, IEEE Transactions on Electron Devices, vol. 66, pp. 2544–2550, 2019.
2023
A. Gowrisankar, Charan, V. Sai, Chandrasekar, H. , Venugopalarao, A. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , “Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications”, IEEE Transactions on Electron Devices, 2023.
R. Baby, Reshma, K. , Chandrasekar, H. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , “Study of TaN-gated p-GaN E-mode HEMT”, IEEE Transactions on Electron Devices, vol. 70, pp. 1607–1612, 2023.