P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. ,
“Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs”,
IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.
P. S. Park, Nath, D. N. , and Rajan, S. ,
“Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures”,
IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.
S. Dutta Gupta, Soni, A. , Joshi, V. , Kumar, J. , Sengupta, R. , Khand, H. , Shankar, B. , Mohan, N. , Raghavan, S. , Bhat, N. , and , ,
“Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By $${$$\backslash$mathrm ${$Al$}$$}$ _ ${$x$}$${$$\backslash$mathrm ${$Ti$}$$}$ _ ${$1-x$}$ $ O Based Gate Stack Engineering”,
IEEE Transactions on Electron Devices, vol. 66, pp. 2544–2550, 2019.
N. Remesh, Mohan, N. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs”,
IEEE Transactions on Electron Devices, vol. 67, pp. 2311–2317, 2020.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”,
IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
Z. Yang, Nath, D. N. , Zhang, Y. , Khurgin, J. B. , and Rajan, S. ,
“Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”,
IEEE Electron Device Letters, vol. 36, pp. 436-438, 2015.