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Publications

Found 6 results
Author Title Type [ Year(Asc)]
Filters: Keyword is HEMTs  [Clear All Filters]
2020
N. Remesh, Mohan, N. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol. 67, pp. 2311–2317, 2020.
2019
S. Dutta Gupta, Soni, A. , Joshi, V. , Kumar, J. , Sengupta, R. , Khand, H. , Shankar, B. , Mohan, N. , Raghavan, S. , Bhat, N. , and , , Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By $${$$\backslash$mathrm ${$Al$}$$}$ _ ${$x$}$${$$\backslash$mathrm ${$Ti$}$$}$ _ ${$1-x$}$ $ O Based Gate Stack Engineering, IEEE Transactions on Electron Devices, vol. 66, pp. 2544–2550, 2019.
2017
S. Kumar, Gupta, P. , Guiney, I. , Humphreys, C. J. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer, IEEE Transactions on Electron Devices, vol. 64, pp. 4868–4874, 2017.
2015
P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. , Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs, IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.
2013
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Determination of trap energy levels in AlGaN/GaN HEMT, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
2012
P. S. Park, Nath, D. N. , and Rajan, S. , Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures, IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.