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Publications

Found 9 results
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Filters: Keyword is Doping  [Clear All Filters]
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B
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Surface state engineering of metal/MoS 2 contacts using sulfur treatment for reduced contact resistance and variability, IEEE Transactions on Electron Devices, vol. 63, pp. 2556–2562, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability, IEEE Transactions on Electron Devices, vol. 63, pp. 2556-2562, 2016.
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S. Ghoshal and Kumar, P. S. A. , Magneto-Transport Study of Pure and Co Doped ZnO Thin Films, IEEE Transactions on Magnetics, vol. 48, pp. 3426-3429, 2012.
M
A. Medury, Mercha, K. , Ritzenthaler, R. , De Keersgieter, A. , Chiarella, T. , Collaert, N. , Bhat, N. , and Bhat, K. N. , Device scaling model for bulk FinFETs, in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), 2012, pp. 113-116.
R
N. Remesh, Mohan, N. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, vol. 67, pp. 2311–2317, 2020.
S
A. Sharma, Suma, B. N. , Bhat, K. N. , and Naik, A. K. , Gallium-Doped Piezoresistive Sensor With Optimized Focused Ion Beam Implantation, Journal of Microelectromechanical Systems, vol. 26, pp. 127–134, 2017.
Y
Z. Yang, Nath, D. N. , Zhang, Y. , Khurgin, J. B. , and Rajan, S. , Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors, IEEE Electron Device Letters, vol. 36, pp. 436-438, 2015.