K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. ,
“High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”,
IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
H. Chandrasekar, Ganapathi, K. L. , Bhattacharjee, S. , Bhat, N. , and Nath, D. N. ,
“Optical-Phonon-Limited High-Field Transport in Layered Materials”,
IEEE Transactions on Electron Devices, vol. 63, pp. 767-772, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. ,
“Surface state engineering of metal/MoS 2 contacts using sulfur treatment for reduced contact resistance and variability”,
IEEE Transactions on Electron Devices, vol. 63, pp. 2556–2562, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability”,
IEEE Transactions on Electron Devices, vol. 63, pp. 2556-2562, 2016.