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Publications

Found 7 results
Author Title Type [ Year(Desc)]
Filters: Keyword is field effect transistors  [Clear All Filters]
2015
P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. , “Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs”, IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.
2016
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
H. Chandrasekar, Ganapathi, K. L. , Bhattacharjee, S. , Bhat, N. , and Nath, D. N. , “Optical-Phonon-Limited High-Field Transport in Layered Materials”, IEEE Transactions on Electron Devices, vol. 63, pp. 767-772, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Surface state engineering of metal/MoS 2 contacts using sulfur treatment for reduced contact resistance and variability”, IEEE Transactions on Electron Devices, vol. 63, pp. 2556–2562, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability”, IEEE Transactions on Electron Devices, vol. 63, pp. 2556-2562, 2016.
2019
S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. , “Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors”, IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.