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Filters: Keyword is molybdenum compounds [Clear All Filters]

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D

E. W. Lee, Ma, L. , Nath, D. N. , Lee, C. H. , Wu, Y. , and Rajan, S. , “Demonstration of 2D/3D p-MoS2/n-SiC junction”, in 72nd Device Research Conference, 2014, pp. 79-80.

E

D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. , “Electron transport in large-area epitaxial MoS2”, in 72nd Device Research Conference, 2014, pp. 89-90.

H

K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.

I

S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.

O

H. Chandrasekar, Ganapathi, K. L. , Bhattacharjee, S. , Bhat, N. , and Nath, D. N. , “Optical-Phonon-Limited High-Field Transport in Layered Materials”, IEEE Transactions on Electron Devices, vol. 63, pp. 767-772, 2016.

S

S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability”, IEEE Transactions on Electron Devices, vol. 63, pp. 2556-2562, 2016.