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Publications

Found 7 results
[ Author(Desc)] Title Type Year
Filters: Keyword is high electron mobility transistors  [Clear All Filters]
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H
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , “Lateral energy band engineering of Al2O3/III-nitride interfaces”, in 72nd Device Research Conference, 2014, pp. 131-132.
K
A. Kalra, Rathkanthiwar, S. , Remesh, N. , Muralidharan, R. , Nath, D. , and Raghavan, S. , “Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon”, in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020.
P
P. S. Park, Nath, D. N. , and Rajan, S. , “Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures”, IEEE Electron Device Letters, vol. 33, pp. 991-993, 2012.
R
N. Remesh, Kumar, S. , Guiney, I. , Humphreys, C. J. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias”, physica status solidi (a), vol. 217, p. 1900794, 2020.
S
V. K. Singh and Nath, D. N. , “Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors”, physica status solidi (a), vol. 215, p. 1700757, 2018.
Y
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Determination of trap energy levels in AlGaN/GaN HEMT”, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.