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Publications

Found 7 results
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Filters: Keyword is contact resistance  [Clear All Filters]
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B
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Surface state engineering of metal/MoS 2 contacts using sulfur treatment for reduced contact resistance and variability, IEEE Transactions on Electron Devices, vol. 63, pp. 2556–2562, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Surface State Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability, IEEE Transactions on Electron Devices, vol. 63, pp. 2556-2562, 2016.
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K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-Performance HfO2 Back Gated Multilayer MoS2 Transistors, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-performance HfO 2 back gated multilayer MoS 2 transistors, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
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P. S. Park, Krishnamoorthy, S. , Bajaj, S. , Nath, D. N. , and Rajan, S. , Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs, IEEE Electron Device Letters, vol. 36, pp. 226-228, 2015.