Publications

Search

Show only items where

Author

Type

Term

Year

Keyword

Found 5 results

Filters: Keyword is Tunneling [Clear All Filters]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

A

S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. , “Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors”, IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.

C

Z. Yang, Nath, D. N. , Zhang, Y. , Khurgin, J. B. , and Rajan, S. , “Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors”, IEEE Electron Device Letters, vol. 36, pp. 436-438, 2015.

I

S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.

S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.

M

Z. Yang, Zhang, Y. , Krishnamoorthy, S. , Nath, D. N. , Khurgin, J. B. , and Rajan, S. , “Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors”, in 2015 73rd Annual Device Research Conference (DRC), 2015, pp. 53-54.