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Conference Paper

R. Srinivasan and Bhat, N. , “Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications”, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.

Z. Yang, Zhang, Y. , Krishnamoorthy, S. , Nath, D. N. , Khurgin, J. B. , and Rajan, S. , “Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors”, in 2015 73rd Annual Device Research Conference (DRC), 2015, pp. 53-54.

A. S. Medury, Majumdar, K. , Bhat, N. , and Bhat, K. N. , “Modeling the threshold voltage of ultra-thin-body(UTB) long channel symmetric double-gate (DG) MOSFETs”, in Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009, pp. 1-2.