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Publications

Found 57 results
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A
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
B
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
C
S. Chaurasia, Chatterjee, A. , Selvaraja, S. , and Avasthi, S. , “Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy”, in Optical Sensing and Detection V, 2018.
T. A. Chowdary and Banerjee, G. , “An integrated X-band FMCW radar transceiver in 130-nm CMOS technology”, in 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC), 2015, pp. 151-154.
D
D. Dasgupta, Peddi, S. Srinivas, Saini, D. K. , and Ghosh, A. , “Implantation and retrieval of magnetic nanobots for treatment of endodontic re-infection in human dentine”, 2021.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , “Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity”, arXiv preprint arXiv:2106.12899, 2021.
P. Deshpande, Suri, P. , Jeong, H. - H. , Fischer, P. , Ghosh, A. , and Ghosh, A. , “Investigating photoresponsivity of graphene-silver hybrid nanomaterials in the ultraviolet”, The Journal of Chemical Physics, vol. 152, p. 044709, 2020.
G
J. S. Gaggatur and Banerjee, G. , “Integrated temperature sensor for reconfigurable radio frequency synthesizer”, in Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on, 2015, pp. 1-6.
J. Baby George, Amrutur, B. , and Sikdar, S. , “Input coding for neuro-electronic hybrid systems”, in 4th IEEE EMBS Conference on Neural Engineering, 2013.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , “Input coding for neuro-electronic hybrid systems”, Biosystems, vol. 126, pp. 1-11, 2014.
S. Ghatak, Banerjee, A. , and Sikdar, S. K. , “Ischaemic concentrations of lactate increase TREK 1 channel activity by interacting with a single histidine residue in the carboxy terminal domain”, Journal of Physiology (Lond.), vol. 594, pp. 59–81, 2016.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
H
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
K
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
S. Khan and Ananthasuresh, G. K. , “Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers”, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , “Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths”, Optics Express, vol. 22, pp. 5684–5692, 2014.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.

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