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Publications

Found 57 results
Author Title Type [ Year(Desc)]
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1992
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
2001
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
2004
K. Maitra and Bhat, N. , “Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance”, IEEE Transactions on Electron Devices, pp. 409–414, 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
2005
R. Srinivasan and Bhat, N. , “Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications”, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.
2007
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, “Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices”, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
2009
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
2010
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , “Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India”, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , “Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”, Applied Physics Letters, vol. 96, p. 123504, 2010.
2012
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , “In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
2013
J. Baby George, Amrutur, B. , and Sikdar, S. , “Input coding for neuro-electronic hybrid systems”, in 4th IEEE EMBS Conference on Neural Engineering, 2013.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , “Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis”, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
2014
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , “Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths”, Optics Express, vol. 22, pp. 5684–5692, 2014.
S. Khan and Ananthasuresh, G. K. , “Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers”, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , “Input coding for neuro-electronic hybrid systems”, Biosystems, vol. 126, pp. 1-11, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
A. N. Mallya and Ramamurthy, P. C. , “Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies”, Analyst, vol. 139, pp. 6456–6466, 2014.
2015
A. Raman and Ananthasuresh, G. K. , “Improving a Dual-Probe Heat Pulse based soil moisture sensor using insulated nichrome wire”, in Physics and Technology of Sensors (ISPTS), 2015 2nd International Symposium on, 2015, pp. 283-288.

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