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Publications

Found 61 results
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2016
S. Mukhopadhyay, Mitra, S. , Ding, Y. I. Ming, Ganapathi, K. L. , Misra, D. , Bhat, N. , Tapily, K. , Clark, R. D. , Consiglio, S. , Wajda, C. S. , and , , Effect of post plasma oxidation on Ge gate stacks interface formation, ECS Transactions, vol. 72, pp. 303–312, 2016.
A. Sharma, Mohan, S. , and Suwas, S. , The effect of the deposition rate on the crystallographic texture, microstructure evolution and magnetic properties in sputter deposited Ni-Mn-Ga thin films, Thin Solid Films, vol. 616, pp. 530–542, 2016.
K. Chakraborty, Kumawat, N. , Sultana, S. , and Varma, M. M. , Enhancing the quality factor of grating coupled plasmon resonance in optical recording media, Sensors and Actuators A: Physical, vol. 244, pp. 50–55, 2016.
C. Kaur Malhi and Pratap, R. , On the Equivalence of Acoustic Impedance and Squeeze Film Impedance in Micromechanical Resonators, Journal of Vibration and Acoustics, vol. 138, p. 011005, 2016.
2015
S. M. Ankolekar and Sikdar, S. K. , Early Postnatal Exposure to Lithium In Vitro Induces Changes in AMPAR mEPSCs and Vesicular Recycling at Hippocampal Glutamatergic Synapses, J Biosci, vol. 40, pp. 339–54, 2015.
C. Kaur Malhi and Pratap, R. , On the Equivalence of Acoustic Impedance and Squeeze Film Impedance in Micromechanical Resonators, Journal of Vibration and Acoustics, ASME, 2015.
H. Chandrasekar, Singh, M. , Raghavan, S. , and Bhat, N. , Estimation of background carrier concentration in fully depleted GaN films, Semiconductor Science and Technology, vol. 30, p. 115018, 2015.
2014
D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. , Electron transport in large-area epitaxial MoS2, in 72nd Device Research Conference, 2014, pp. 89-90.
T. - H. Hung, Sasaki, K. , Kramata, A. , Nath, D. N. , Park, P. Sung, Polchinski, C. , and Rajan, S. , Energy band line-up of atomic layer deposited Al2O3 on ?-Ga2O3, Applied Physics Letters, vol. 104, p. 162106, 2014.
L. Ma, Nath, D. N. , Lee, II, E. W. , Lee, C. Hee, Yu, M. , Aerhart, A. , Rajan, S. , and Wu, Y. , Epitaxial growth of large area single-crystalline few-layer {MoS}2 with high space charge mobility of 192 cm2/Vs, Applied Physics Letters, vol. 105, 2014.
S. D. Vishwakarma, Pandey, A. K. , Parpia, J. M. , Southworth, D. R. , Craighead, H. G. , and Pratap, R. , Evaluation of Mode Dependent Fluid Damping in a High Frequency Drumhead Microresonator, Journal of Microelectromechanical Systems, vol. 23, pp. 234-246, 2014.
K. Manna, Joshi, R. S. , Elizabeth, S. , and Kumar, P. S. A. , Evaluation of the intrinsic magneto-dielectric coupling in LaMn0.5Co0.5O3 single crystals. , Appl. Phys. Lett., vol. 104, p. 202905, 2014.
2013
S. Talukdar, Kumar, P. , and Pratap, R. , Electric Current Induced Mass Flow in Very Thin Infinite Metallic Films, IEEE Transactions on Electron Devices, vol. 60, pp. 2877-2883, 2013.
D. V. Sridhar Rao, Jain, A. , Lamba, S. , Muraleedharan, K. , and Muralidharan, R. , Electron microscopy investigations of purity of AlN interlayer in AlxGa1?xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy, Appl. Phys. Lett, vol. 102, 2013.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. - H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Electron tunneling spectroscopy of electrically active traps in AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol. 103, p. 223507, 2013.
2012
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. , Electromigration: A Unique Tool for Microstructure Engineering in Metal Films, International Journal of Applied Physics and Mathematics, vol. 2, pp. 2426-2431, 2012.
P. Sung Park, Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization, Applied Physics Letters, vol. 100, p. 063507, 2012.
R. P. Rajan and Ghosh, A. , Enhancement of circular differential deflection of light in an optically active medium, Optics Letters, vol. 37, pp. 1232–1234, 2012.
2011
M. Esposto, Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , Hung, T. - H. , and Rajan, S. , Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride, Applied Physics Letters, vol. 99, p. 133503, 2011.
S. Avasthi, Qi, Y. , Vertelov, G. , Schwartz, J. , Kahn, A. , and Sturm, J. C. , Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces, Surface Science, vol. 605, p. 1308, 2011.
D. S. Rawal, Sehgal, B. K. , Muralidharan, R. , and Malik, H. K. , Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma, Plasma Science and Technology, vol. 13, 2011.
2010
B. Ahmad and Pratap, R. , The effect of evacuated backside cavity on the dynamic characteristics of a capacitive micromachined ultrasound transducer, International Journal of Advances in Engineering Sciences and Applied Mathematics, vol. 2, pp. 50-54, 2010.
K. Majumdar, Bhat, N. , Majhi, P. , and Jammy, R. , Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit, IEEE Transactions on Electron Devices, 2010.
B. Ahmad and Pratap, R. , Elasto-Electrostatic Analysis of Circular Microplates Used in Capacitive Micromachined Ultrasonic Transducers, IEEE Sensors Journal, vol. 10, pp. 1767–1773, 2010.
D. N. Nath, Hsieh, E. , Keller, S. , DenBaars, S. , Mishra, U. K. , and Rajan, S. , Electron Transport in Vicinal N-polar AlGaN/GaN heterostructures, Applied Physics Letters, vol. 97, p. 162106, 2010.

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