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Publications

Found 57 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Title is I  [Clear All Filters]
2016
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Ghatak, Banerjee, A. , and Sikdar, S. K. , Ischaemic concentrations of lactate increase TREK 1 channel activity by interacting with a single histidine residue in the carboxy terminal domain, Journal of Physiology (Lond.), vol. 594, pp. 59–81, 2016.
2015
A. Raman and Ananthasuresh, G. K. , Improving a Dual-Probe Heat Pulse based soil moisture sensor using insulated nichrome wire, in Physics and Technology of Sensors (ISPTS), 2015 2nd International Symposium on, 2015, pp. 283-288.
P. Mandal, Chopra, V. , and Ghosh, A. , Independent Direction Control of Magnetic Nanomotors, ACS Nano, vol. 9, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. S. Gaggatur and Banerjee, G. , Integrated temperature sensor for reconfigurable radio frequency synthesizer, in Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on, 2015, pp. 1-6.
T. A. Chowdary and Banerjee, G. , An integrated X-band FMCW radar transceiver in 130-nm CMOS technology, in 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC), 2015, pp. 151-154.
N. Mohan, , , Soman, R. , and Raghavan, S. , Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes, Journal of Applied Physics, vol. 118, p. 135302, 2015.
2014
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths, Optics Express, vol. 22, pp. 5684–5692, 2014.
S. Khan and Ananthasuresh, G. K. , Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , Input coding for neuro-electronic hybrid systems, Biosystems, vol. 126, pp. 1-11, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
A. N. Mallya and Ramamurthy, P. C. , Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies, Analyst, vol. 139, pp. 6456–6466, 2014.
2013
J. Baby George, Amrutur, B. , and Sikdar, S. , Input coding for neuro-electronic hybrid systems, in 4th IEEE EMBS Conference on Neural Engineering, 2013.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces, Applied Physics Letters, vol. 102, p. 072105, 2013.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
2012
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
2010
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , Intrinsic limits of subthreshold slope in biased bilayer graphene transistor, Applied Physics Letters, vol. 96, p. 123504, 2010.
2009
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , Integrated CMOS gas sensors, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
2007
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
2005
R. Srinivasan and Bhat, N. , Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.

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