Journal Article
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. ,
“20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings”,
Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.
H. S. Kotian, Abdulla, A. Z. , Hithysini, K. N. , Harkar, S. , Joge, S. , Mishra, A. , Singh, V. , and Varma, M. M. ,
“Active modulation of surfactant-driven flow instabilities by swarming bacteria”,
Physical Review E, vol. 101, p. 012407, 2020.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Sharma, D. Ganesh, Sharma, A. , Mohan, S. , and Bhat, N. ,
“Adaptive Transport in High Performance (I on), Steep Sub-Threshold Slope (SS< 60 mV/dec) MoS 2 Transistors”,
IEEE Transactions on Nanotechnology, vol. 18, pp. 1071–1078, 2019.
S. Talukder, Gogoi, B. , Kumar, P. , Pratap, R. , Maoz, R. , and Sagiv, J. ,
“Advanced Nanopatterning Using Scanning Probe Technology”,
Materials Today: Proceedings, vol. 18, pp. 740–743, 2019.
R. Lathia, Nampoothiri, K. Narayanan, Sagar, N. , Bansal, S. , Modak, C. Dey, and Sen, P. ,
“Advances in Microscale Droplet Generation and Manipulation”,
Langmuir, 2023.
S. Rathkanthiwar, Kalra, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. ,
“Analysis of screw dislocation mediated dark current in Al 0.50 Ga 0.50 N solar-blind metal-semiconductor-metal photodetectors”,
Journal of Crystal Growth, 2018.
S. S. Mohite, V. Kesari, H. , Sonti, R. , and Pratap, R. ,
“Analytical Solutions for the Stiffness and Damping Co-efficients of Squeeze Films in MEMS Devices Having Perforated Back Plate”,
Journal of Micromechanics and Microengineering, vol. 15, 2005.
A. Ghosh, Mandal, P. , Karmakar, S. , and Ghosh, A. ,
“Analytical theory and stability analysis of an elongated nanoscale object under external torque”,
Physical Chemistry Chemical Physics, vol. 15, pp. 10817–10823, 2013.
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. ,
“An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition”,
RSC Advances, vol. 11, pp. 36901–36912, 2021.
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. ,
“An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition”,
RSC Advances, vol. 11, pp. 36901–36912, 2021.
B. W. Wang, Dumon, P. , Selvaraja, S. K. , Teng, J. , Pathak, S. , Han, X. , JinyanWang, X. Jian, Zhao, M. , Baets, R. , and Morthier, G. ,
“Athermal AWGs in SOI by overlaying a polymer cladding on narrowed arrayed waveguides”,
Applied Optics, vol. 51, pp. 1251–1256, 2012.
I. Guiney, Humphreys, C. J. , Sen, P. , Muralidharan, R. , Nath, D. N. , and , ,
“Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme”,
JVSTB, vol. 38, p. 032207, 2020.
A. Goyal, Kapoor, A. K. , Raman, R. , Dalal, S. , Mohan, P. , and Muralidharan, R. ,
“Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures”,
J. Appl. Phys., vol. 117, p. 225702, 2015.
A. Goyal, Kapoor, A. K. , Raman, R. , Dalal, S. , Mohan, P. , and Muralidharan, R. ,
“Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures”,
J. Appl. Phys., vol. 117, p. 225702, 2015.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. ,
“BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask”,
IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. ,
“BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask”,
IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
R. Mudachathi, Shivananju, B. N. , Prashanth, G. R. , Asokan, S. , and Varma, M. M. ,
“Calibration of Etched Fiber Bragg Grating Sensor Arrays for Measurement of Molecular Surface Adsorption”,
Journal of Lightwave Technology, vol. 31, pp. 2400-2406, 2013.