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2004

K. Maitra and Bhat, N. , “Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance”, IEEE Transactions on Electron Devices, pp. 409–414, 2004.

A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.

J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.

S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.

S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.

2001

E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.

1992

N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.

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