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Publications

Found 260 results
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A. Kumar, Nambiar, S. , Kallega, R. , Ranganath, P. , Ea, P. , and Selvaraja, S. Kumar, High-efficiency vertical fibre-to-polymer waveguide coupling scheme for scalable polymer photonic circuits, Optics Express, vol. 29, pp. 9699–9710, 2021.
A. Kumar, Nambiar, S. , Kallega, R. , Ranganath, P. , Ea, P. , and Selvaraja, S. Kumar, High-efficiency vertical fibre-to-polymer waveguide coupling scheme for scalable polymer photonic circuits, Optics Express, vol. 29, pp. 9699–9710, 2021.
B. N. Shivananju, Yamdagni, S. , Fazuldeen, R. , Kumar, A. K. S. , Nithin, S. P. , Varma, M. M. , and Asokan, S. , Highly Sensitive Carbon Nanotubes Coated Etched Fiber Bragg Grating Sensor for Humidity Sensing, IEEE Sensors Journal, vol. 14, pp. 2615-2619, 2014.
S. Avasthi, McClain, W. , Man, G. , Kahn, A. , Schwartz, J. , and Sturm, J. C. , Hole-Blocking Titanium-Oxide/Silicon Heterojunction and its Application to Photovoltaics, Applied Physics Letters, vol. 102, p. 203901, 2013.
K. B. Vinayakumar, Kulkarni, P. G. , Nayak, M. M. , Dinesh, N. S. , Hegde, G. M. , Ramachandra, S. G. , and Rajanna, K. , A hollow stainless steel microneedle array to deliver insulin to a diabetic rat, Journal of Micromechanics and Microengineering, vol. 26, p. 065013, 2016.
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Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. , III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA), in High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. , III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA), in High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths, Optics Express, vol. 22, pp. 5684–5692, 2014.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111), Journal of Applied Physics, vol. 127, p. 215705, 2020.
S. Khan and Ananthasuresh, G. K. , Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , Integrated X-Band Inductor With a Nanoferrite Film Core, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. , Introducing Water Electrolithography, ACS Omega, 2021.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. , Introducing Water Electrolithography, ACS Omega, 2021.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis, Appl. Phys. Lett., vol. 103, p. 222406, 2013.

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