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Publications

Found 257 results
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2021
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. , “An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition”, RSC Advances, vol. 11, pp. 36901–36912, 2021.
N. Mohta, Rao, A. , Remesh, N. , Muralidharan, R. , and Nath, D. N. , “An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition”, RSC Advances, vol. 11, pp. 36901–36912, 2021.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , “Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity”, arXiv preprint arXiv:2106.12899, 2021.
Y. Hassan, Park, J. Hyun, Crawford, M. L. , Sadhanala, A. , Lee, J. , Sadighian, J. C. , Mosconi, E. , Shivanna, R. , Radicchi, E. , Jeong, M. , and , , “Ligand-engineered bandgap stability in mixed-halide perovskite LEDs”, Nature, vol. 591, pp. 72–77, 2021.
K. Nizammuddi Subhani, Remesh, N. , Niranjan, S. , Raghavan, S. , Muralidharan, R. , Nath, D. N. , and Bhat, K. N. , “Nitrogen rich PECVD Silicon Nitride for passivation of Si and AlGaN/GaN HEMT devices”, Solid-State Electronics, p. 108188, 2021.
K. Lakshmi Ganapathi, Bhat, N. , and Mohan, S. , “Optimization and integration of ultrathin e-beam grown HfO2 gate dielectrics in MoS2 transistors”, Journal of Physics D: Applied Physics, vol. 54, p. 445302, 2021.
K. Roy, Kalyan, K. , Ashok, A. , Shastri, V. , Jeyaseelan, A. , Mandal, A. , and Pratap, R. , “A PMUT Integrated Microfluidic System for Fluid Density Sensing”, arXiv preprint arXiv:2104.11793, 2021.
A. Kalkal, Kadian, S. , Kumar, S. , Manik, G. , Sen, P. , Kumar, S. , and Packirisamy, G. , “Ti3C2-MXene decorated with nanostructured silver as a dual-energy acceptor for the fluorometric Neuron Specific Enolase detection”, Biosensors and Bioelectronics, p. 113620, 2021.
A. Dash, More, S. K. , Arora, N. , and Naik, A. K. , “Ultra-sensitive charge detection and latch memory using MoS2-nanoresonator-based bifurcation amplifiers”, Applied Physics Letters, vol. 118, p. 053105, 2021.
K. Hanium Maria, Sakhuja, N. , Jha, R. Kumar, and Bhat, N. , “Ultra-Sonication Assisted Synthesis of 2D SnS 2 Nanoflakes for Room-Temperature No Gas Detection”, IEEE Sensors Journal, vol. 21, pp. 10420–10427, 2021.
2020
H. S. Kotian, Abdulla, A. Z. , Hithysini, K. N. , Harkar, S. , Joge, S. , Mishra, A. , Singh, V. , and Varma, M. M. , “Active modulation of surfactant-driven flow instabilities by swarming bacteria”, Physical Review E, vol. 101, p. 012407, 2020.
I. Guiney, Humphreys, C. J. , Sen, P. , Muralidharan, R. , Nath, D. N. , and , , “Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme”, JVSTB, vol. 38, p. 032207, 2020.
R. Balasubramanian, Pal, S. , Rao, A. , Naik, A. , Chakraborty, B. , Maiti, P. K. , and Varma, M. , “DNA translocation through vertically stacked 2D layers of graphene & hexagonal Boron Nitride heterostructure nanopore”, 2020.
A. Ghose, Kumar, A. , Raj, S. , Modak, C. Dey, Tripathy, A. , and Sen, P. , “Fabrication of polymer-based water-repellent surfaces of complex shapes by physical transfer of nanostructures”, ISSS Journal of Micro and Smart Systems, pp. 1–10, 2020.
P. Moitra, Bhagat, D. , Kamble, V. B. , Umarji, A. M. , Pratap, R. , and Bhattacharya, S. , “First example of engineered β-cyclodextrinylated MEMS devices for volatile pheromone sensing of olive fruit pests”, Biosensors and Bioelectronics, p. 112728, 2020.
S. Rathkanthiwar, Kalra, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Growth of AlN on sapphire: Predicting the optimal nucleation density by surface kinetics modeling”, Journal of Applied Physics, vol. 127, p. 205301, 2020.
A. Kalra, Rathkanthiwar, S. , Remesh, N. , Muralidharan, R. , Nath, D. , and Raghavan, S. , “Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon”, in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2020.
R. K. Mech, Mohta, N. , Chatterjee, A. , Selvaraja, S. Kumar, Muralidharan, R. , and Nath, D. N. , “High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3”, physica status solidi (a), vol. 217, p. 1900932, 2020.
R. K. Mech, Mohta, N. , Chatterjee, A. , Selvaraja, S. Kumar, Muralidharan, R. , and Nath, D. N. , “High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3”, physica status solidi (a), vol. 217, p. 1900932, 2020.
R. K. Mech, Mohta, N. , Chatterjee, A. , Selvaraja, S. Kumar, Muralidharan, R. , and Nath, D. N. , “High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3”, physica status solidi (a), vol. 217, p. 1900932, 2020.
U. Ul Muazzam, M Raghavan, S. , Pratiyush, A. Singh, Muralidharan, R. , Raghavan, S. , Nath, D. N. , and Shivashankar, S. A. , “High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition”, Journal of Alloys and Compounds, vol. 828, p. 154337, 2020.
U. Ul Muazzam, M Raghavan, S. , Pratiyush, A. Singh, Muralidharan, R. , Raghavan, S. , Nath, D. N. , and Shivashankar, S. A. , “High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition”, Journal of Alloys and Compounds, vol. 828, p. 154337, 2020.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.
A. Kalra, Rathkanthiwar, S. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , “Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes”, Semiconductor Science and Technology, vol. 35, p. 035001, 2020.
S. Kumar, Bin Dolmanan, S. , Tripathy, S. , Muralidharan, R. , and Nath, D. Neelim, “Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors”, physica status solidi (a), vol. 217, p. 1900766, 2020.

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