Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunctions

Abstract

We present an approach for silicon (100) surface passivation using the organic small molecule, 1–10 phenanthrenequinone. Lifetime measurements show that on passivated silicon surfaces, recombination velocities of less than 100 cm/s can be achieved. Such electrically inactive surfaces are used to demonstrate a wide-bandgap organic/silicon heterojunction which reduces the effective minority carrier surface recombination at the metal/silicon contact compared to a similar structure without the organic layer.

Publication
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Date