Research

Research Publications in 2020:

High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition .
Journal of Alloys and Compounds, Volume 828, Year 2020

Chalcogen-assisted enhanced atomic orbital interaction at TMD-metal interface and sulfur passivation for overall performance boost of 2-D TMD FETs .
IEEE Transactions on Electron Devices, Volume 67, Year 2020, Pages 717-724.

Enabling Transfer of Ultrathin Layers of GaN for Demonstration of a Heterogenous Stack on Copper Heat Spreader .
IEEE Transactions on Components, Packaging and Manufacturing Technology, Volume 10, Year 2020, Pages 339-342.

Selective Electron or Hole Conduction in Tungsten Diselenide (WSe2) Field-Effect Transistors by Sulfur-Assisted Metal-Induced Gap State Engineering .
IEEE Transactions on Electron Devices, Volume 67, Year 2020, Pages 383-388 .

A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias .
Physica Status Solidi (A) Applications and Materials Science, Volume 217, Year 2020 .

Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs .
IEEE Transactions on Electron Devices, Volume 67, Year 2020, Pages 2311-2317.

Carrier Transport in Graphene Field-Effect Transistors on Gated Polar Nitride Substrates .
Physica Status Solidi (A) Applications and Materials Science, Year 2020 .

Optical Properties of Mist CVD Grown α-Ga2O3 .
IEEE Photonics Technology Letters, Volume 32, Year 2020, Pages 422-425 .

Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes .
Semiconductor Science and Technology, Volume 35, Year 2020 .

Sustainable Photovoltaics .
Lecture Notes in Energy, Volume 39, Year 2020, Pages 25-85 .

Distinct Failure Modes of AlGaN/GaN HEMTs under ESD Conditions .
IEEE Transactions on Electron Devices, Volume 67, Year 2020, Pages 1567-1574 .

Research Publications in 2019:

Noninvasive Subsurface Electrical Probe for Encapsulated Layers in van der Waals Heterostructures.
Physical Review Applied, Volume 12, Year 2019 .

Reversible defect engineering in graphene grain boundaries.
Balasubramanian, Krishna;Biswas, Tathagatha;Ghosh, Priyadarshini;Suran, Swathi;Mishra, Abhishek;Mishra, Rohan;Sachan, Ritesh;Jain, Manish;Varma, Manoj;Pratap, Rudra;Raghavan, Srinivasan
Nature Communications, Volume 10, Year 2019.

On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111) .
Singh, Vikash K.;Taya, Payal;Jana, Dipankar;Tyagi, Renu;Raghavan, S.;Sharma, T. K.
Superlattices and Microstructures, Volume 134, Year 2019 .

ESD Reliability of AlGaN/GaN HEMT Technology.
IEEE Transactions on Electron Devices, Volume 66, Year 2019, Pages 3756-3763.

Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model .
Remesh, Nayana;Mohan, Nagaboopathy;Kumar, Sandeep;Prabhu, Shreesha;Guiney, Ivor;Humphreys, Colin J.;Raghavan, Srinivasan;Muralidharan, Rangarajan;Nath, Digbijoy N.
IEEE Transactions on Electron Devices, Volume 66, Year 2019, Pages 613-618 .

Polarization-Graded AlGaN Solar-Blind p-i-n Detector with 92% Zero-Bias External Quantum Efficiency .
Kalra, Anisha;Rathkanthiwar, Shashwat;Muralidharan, Rangarajan;Raghavan, Srinivasan;Nath, Digbijoy N.
IEEE Photonics Technology Letters, Volume 31, Year 2019, Pages 1237-1240 .

An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate .
Semiconductor Science and Technology, Volume 34, Year 2019 .

Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs under Fast Cyclic Transient Stress .
Shankar, Bhawani;Soni, Ankit;Dutta Gupta, Sayak;Shikha, Swati;Singh, Sandeep;Raghavan, Srinivasan;Shrivastava, Mayank
Technical Digest - International Electron Devices Meeting, IEDM, Volume 2018-December, Year 2019, Pages 34.6.1-34.6.4 .

First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs .
Shankar, Bhawani;Soni, Ankit;Chandrasekar, Hareesh;Raghavan, Srinivasan;Shrivastava, Mayank .
IEEE Transactions on Electron Devices, Volume 66, Year 2019, Pages 3433-3440 .

Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: Case for MoS2/GaN and β-In2Se3/GaN .
Solanke, Swanand V.;Rathkanthiwar, Shashwat;Kalra, Anisha;Mech, Roop Kumar;Rangarajan, Muralidharan;Raghavan, Srinivasan;Nath, Digbijoy N.
Semiconductor Science and Technology, Volume 34, Year 2019 .

Esd behavior of algan/gan schottky diodes .
Shankar, Bhawani;Gupta, Sayak Dutta;Soni, Ankit;Raghavan, Srinivasan;Shrivastava, Mayank .
IEEE Transactions on Device and Materials Reliability, Volume 19, Year 2019, Pages 437-444 .

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage Gate Leakage Instabilities .
Dutta Gupta, Sayak;Joshi, Vipin;Shankar, Bhawani;Shikha, Swati;Raghavan, Srinivasan;Shrivastava, Mayank .
IEEE International Reliability Physics Symposium Proceedings, Volume 2019-March, Year 2019 .

First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects .
Mishra, Abhishek;Meersha, Adil;Kranthi, N. K.;Trivedi, Kruti;Variar, Harsha B.;Veenadhari Bellamkonda, N. S.;Raghavan, Srinivasan;Shrivastava, Mayank .
IEEE International Reliability Physics Symposium Proceedings, Volume 2019-March, Year 2019 .

High electron mobility large grain polycrystalline epitaxial Germanium on Silicon using liquid phase crystallization for III-V photovoltaic applications .
Conference Record of the IEEE Photovoltaic Specialists Conference, Year 2019, Pages 1734-1736

Directed Microwave-Assisted Self-Assembly of Au–Graphene–Au Plasmonic Dimers for SERS Applications .
Ghosh, Priyadarshini;Paria, Debadrita;Balasubramanian, Krishna;Ghosh, Ambarish;Narayanan, Ravishankar;Raghavan, Srinivasan .
Advanced Materials Interfaces, Volume 6, Year 2019 .

The effect of strain on effective Duffing nonlinearity in the CVD-MoS 2 resonator .
Samanta, Chandan;Arora, Nishta;Kumar, Kranthi;Raghavan, Srinivasan;Naik, A. K.
Nanoscale, Volume 11, Year 2019, Pages 8394-8401 .

Low-power four-wave mixing in graphene-on-SiN micro-ring resonator .
Dash, Aneesh;Nambiar, Siddharth R.;Pandey, Mrityunjay;Raghavan, Srinivasan;Naik, Akshay;Selvaraja, Shankar Kumar .
Proceedings of SPIE - The International Society for Optical Engineering, Volume 10920, Year 2019 .

3d nano capacitors using electrodeposited nickel nanowires in porous anodic alumina template .
Viegas, Alison E.;Dutta, Sudipta;Rekha, S.;Bobji, M. S.;Raghavan, Srinivasan;Bhat, Navakanta
Springer Proceedings in Physics, Volume 215, Year 2019, Pages 577-581 .

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation by AlxTi1?xO Based Gate Stack Engineering .
Dutta Gupta, Sayak;Soni, Ankit;Joshi, Vipin;Kumar, Jeevesh;Sengupta, Rudrarup;Khand, Heena;Shankar, Bhawani;Mohan, Nagaboopathy;Raghavan, Srinivasan;Bhat, Navakanta;Shrivastava, Mayank .
IEEE Transactions on Electron Devices, Volume 66, Year 2019, Pages 2544-2550 .

Patents in 2019:

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH RESURF JUNCTION .
Publication Number WO/2019/008603 .

View All Publications