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X-ORIGINAL-URL:https://www.cense.iisc.ac.in
X-WR-CALDESC:Events for CeNSE
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TZID:Asia/Kolkata
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TZOFFSETFROM:+0530
TZOFFSETTO:+0530
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DTSTART:20240101T000000
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250825T090000
DTEND;TZID=Asia/Kolkata:20250903T170000
DTSTAMP:20260423T172514
CREATED:20250730T105018Z
LAST-MODIFIED:20250730T105018Z
UID:8751-1756112400-1756918800@www.cense.iisc.ac.in
SUMMARY:Advanced Training Program on Semiconductor Fabrication & Characterization
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/advanced-training-program-on-semiconductor-fabrication-characterization/
LOCATION:CeNSE\, IISc\, Bengaluru
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250908T080000
DTEND;TZID=Asia/Kolkata:20250916T170000
DTSTAMP:20260423T172514
CREATED:20250730T105127Z
LAST-MODIFIED:20250730T105127Z
UID:8753-1757318400-1758042000@www.cense.iisc.ac.in
SUMMARY:Advanced Training Program on Semiconductor Fabrication & Characterization
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/advanced-training-program-on-semiconductor-fabrication-characterization-2/
LOCATION:CeNSE\, IISc\, Bengaluru
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250919T150000
DTEND;TZID=Asia/Kolkata:20250919T170000
DTSTAMP:20260423T172514
CREATED:20250917T102058Z
LAST-MODIFIED:20250917T102058Z
UID:9231-1758294000-1758301200@www.cense.iisc.ac.in
SUMMARY:Talk By Prof. Deepak Jain-Next generation specialty optical fibers for Classical and Quantum light sources
DESCRIPTION:Spearker - Prof. Deepak Jain - Indian Institute of Technology Delhi\n\nHost faculty - Prof. Supradeepa V.R\n\nApplied Photonics Initiative\, with its sister student chapter IISc Optica Student Chapter at IISc Bengaluru is hosting an \nexpert talk\, titled as "Next generation specialty optical fibers for Classical and Quantum light sources". It is an honor \nfor us to invite Prof. Deepak Jain from Indian Institute of Technology Delhi to share his knowledge and expertise in the \nfield of fiber optics. ✨\n\nIn this talk\, the professor shall present his recent progress on specialty optical fibers\, tailored for both classical and \nquantum light sources applications. This talk will cover progress and key innovations\, being done by his group.\n\nProf. Deepak Jain is an Associate Professor at the Optics & Photonics Center (OPC) of the Indian Institute of Technology \nDelhi where he leads a group on specialty optical fibers and high-power fiber lasers. Before this\, he was a University Research \nFellow at the University of Sydney\, and a HansChristian Oersted and Marie-Curie Research Fellow at the Technical University of Denmark. \nHe obtained his Ph.D. from the Optoelectronics Research Center\, University of Southampton\, UK. His research interests lie at \nthe intersection of light\, its diverse applications\, and the translation of photonics technologies from academia to industry. \nHe is the founder of DeepLase Technologies\, a Delhi-based laser company\, and SpecPhotonics\, an Adelaide-based specialty optical fiber startup.
URL:https://www.cense.iisc.ac.in/event/talk-by-prof-deepak-jain-next-generation-specialty-optical-fibers-for-classical-and-quantum-light-sources/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250922T080000
DTEND;TZID=Asia/Kolkata:20250930T170000
DTSTAMP:20260423T172514
CREATED:20250730T105205Z
LAST-MODIFIED:20250730T105205Z
UID:8755-1758528000-1759251600@www.cense.iisc.ac.in
SUMMARY:Advanced Training Program on Semiconductor Fabrication & Characterization
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/advanced-training-program-on-semiconductor-fabrication-characterization-3/
LOCATION:CeNSE\, IISc\, Bengaluru
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250923T153000
DTEND;TZID=Asia/Kolkata:20250923T170000
DTSTAMP:20260423T172514
CREATED:20250922T093319Z
LAST-MODIFIED:20250922T093408Z
UID:9238-1758641400-1758646800@www.cense.iisc.ac.in
SUMMARY:[Thesis Colloquim] : Photoelectromagnetic effect to probe into transport and recombination parameters in perovskites
DESCRIPTION:Name of the Student  : Ms. Amritha Raj\nDegree Registered    : Ph.D. Engineering \n\n Advisor : Prof. Sushobhan Avasthi\, CeNSE\n\n Date    : 23rd  September  2025  (Tuesday)\, 3:30 PM\n\n Venue   : Hybrid  : Seminar Hall  - https://shorturl.at/Sry81\n\nAbstract:\n\nThis work presents a comprehensive study on establishing a reliable characterization methodology \nbased on the Photoelectromagnetic (PEM) effect in semiconductors. When a semiconductor surface \nis incident by photons of energy higher than its bandgap\, electron-hole pairs are generated on \nthe surface. Due to the concentration gradient\, these excess carriers diffuse into the bulk \nof the semiconductor. When an external magnetic field is applied perpendicular to the diffusion \ngradient\, the photo-diffused carriers get deflected in the opposite direction. This generates an\n open circuit voltage and is called the PEM effect. When connected to an external circuit\, a PEM\n short circuit current flows in the circuit\, which is directly proportional to the mobility\,\n magnetic field\, photon flux\, and effective diffusion length of the semiconductor. The PEM \nshort circuit current is proportional to the product of mobility and effective diffusion \nlength\, whereas the conventional photocurrent is proportional to the mobility lifetime product.\n By combining the PEM effect with the photocurrent (PC) measurements\, it is possible to extract\n key transport and recombination parameters such as carrier mobility\, diffusion length\, surface\n and bulk recombination velocity.\n\nOne of the most compelling aspects of the PEM-PC method is its ability to capture bulk properties\nwithout being overshadowed by surface effects\, which often complicate results in traditional measurements.\n The ratio of PC to PEM signal allows a direct measurement of the bulk carrier lifetime and bulk\n recombination velocity (BRV)\, which is defined as the D/Lb\, where D is the diffusion coefficient \nand Lb is the bulk diffusion length of the semiconductor. This parameter D/Lb determines the \nopen-circuit voltage in solar cells. BRV directly estimates the diode dark saturation current\, J0\, \nwhich measures the total recombination in a p−n junction solar cell. In thermal equilibrium\, \nthe bulk recombination current due to intrinsic defects (i.e.\, SRH recombination) \nis given as  where  is the minority carrier concentration\, and  is the BRV. \nThe J0 is directly related to the open circuit voltage\, hence the BRV provides an estimate \nfor the VOC measured in a practical solar cell. \n\nThe combined PEM and PC data also allow the determination of the lower limit to bulk diffusion length\,\n bulk excess carrier lifetime\, and carrier mobility. While an accurate lifetime and SRV estimation \nis possible with the knowledge of mobility or diffusion coefficient\, the lower bounds serve as a\n qualitative parameter for what values of lifetime and mobility to be expected.\n\nIn this study\, we also investigate the possibility of characterising ultra-thin perovskite \nsingle crystals via the PEM-PC technique\, specifically in the regime where the sample\n thickness is significantly smaller than the carrier diffusion length. As the focus \nshifts toward miniaturized and low-dimensional devices\, the ultrathin limit poses new \nchallenges for material characterization due to surface sensitivity and diffusion-limited \ncarrier transport. By performing systematic PEM and photocurrent (PC) measurements\, \nwe established a practical and contact-efficient framework for extracting SRV and mobility \nin low-dimensional semiconductors.\n\nIn summary\, this work highlights PEM–PC analysis as a powerful diagnostic tool that bridges the gap between material-level characterization and device-level performance\, offering new opportunities for rational interface design and optimization of next-generation photovoltaic devices
URL:https://www.cense.iisc.ac.in/event/thesis-colloquim-photoelectromagnetic-effect-to-probe-into-transport-and-recombination-parameters-in-perovskites/
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250924T153000
DTEND;TZID=Asia/Kolkata:20250924T170000
DTSTAMP:20260423T172514
CREATED:20250919T093530Z
LAST-MODIFIED:20250919T093530Z
UID:9236-1758727800-1758733200@www.cense.iisc.ac.in
SUMMARY:[Thesis Defense]: Pockels effect based on-chip Electro-optic modulators using ferroelectric materials
DESCRIPTION:Thesis Title: Pockels effect based on-chip Electro-optic modulators using ferroelectric materials\nName of the Student   : Ms. Anupama T Vasudevan\nDegree Registered      : Ph.D. Engineering \nAdvisor : Prof. Shankar Kumar Selvaraja\, CeNSE \nDate and Time : Wednesday \, 24th September 2025 at 3:30 PM \nVenue : Online \n\nAbstract: \nAn electro-optic modulator finds applications in multiple technological fields like optical communication\, \nphotonic computing\, quantum computing\, signal processing\, neuromorphic computing\, programmable photonics\,\n and optical sensing. All these fields are moving towards on-chip modulators. An optical modulator changes\n the carrier light's phase or intensity by the electrical signal. Silicon-based nanophotonic devices can\n enable chip-scale photonic systems with integrated devices. Plasma dispersion-based EO modulators in \nsilicon are mature and demonstrated an EO bandwidth of over 110 GHz. Despite such a large bandwidth\, \nachieving a pure phase modulator is impossible. The modulation comes at the cost of absorption loss. \nHence\, exploring more material systems and modulation mechanisms is essential. Pockels effect is the \nlinear EO effect and is an intrinsic property of non-centrosymmetric materials. Ideally the effect \ncan be used to modulate light in THz frequency with pure phase modulation. The works discussed in this \nthesis attempt to study material systems that use the principle of Pockels effect for electro-optic modulation.\n The work here spans theoretical presentations\, material selection\, device optimization\, and practical applications.\n\nTo choose out of the many materials that show Pockels effect\, we have mainly two selection rules: high Pockels \ncoefficient and easy integration into current integrated photonics platforms. Accordingly\, we explore two materials\, \nBarium Titanate (BTO) and Lithium Niobate (LNO)\, for EO modulation through simulations\, material growth\, design and\n development of devices. BTO has the highest Pockels coefficient in its bulk form and reports of its growth on Silicon \nare encouraging. On the other hand\, LNO is a well-established material for non-linear and EO applications. Lithium \nNiobate on Insulator (LNOI) platform is the new thin-films on-chip photonic platform that is being deeply explored \nfor photonic circuits. The first half of the thesis focuses on BTO\, while the second on LNO.\n\nSince we are exploring ferroelectric materials for EO modulators\, understanding the role of ferroelectric domains\n in EO repose is crucial. We studied this dependence through simulations that showed the optimal geometry of the \ndevice to extract the best EO response. We present the importance of uniformly oriented domain structures for\n efficient EO modulation. We find that the electro-optic properties are deeply tied to their material properties\,\n which must be qualified before making a modulator. Once we understand the system\, we can grow it and develop EO\n modulators. Two systems were studied for EO modulator development: BTO thin films and BTO nanoparticles. The thin\n films were deposited using PLD (Pulsed Laser Deposition) technique and nanoparticles were grown by hydrothermal method.\n Material and EO characterisation results of both systems are presented and correlated. Both systems showed a similar\n looking monodirectional EO response. We were able to attribute this discrepancy to the chargers that get trapped in \nthe systems. The two systems are also compared in terms of their properties to understand the underlying growth factors \nthat affect an EO modulator. The importance of EO characterisation to fully qualify a material for EO modulation application \nis highlighted in this work.\n\nThe second half of the thesis focuses on using Lithium Niobate for EO modulation. A Mach-Zehnder-based EO modulator \nusing a loaded waveguide structure was designed\, fabricated and characterised. The device's EO responses were recorded \nand analysed in the DC and high-speed regimes. We got the EO figure of merit\, VπL value of 1.35 V cm\, which is the\n lowest reported for the waveguide configuration used here. Our modulator works till 50 GHz\, limited by modulating \nRF source frequency. Additionally\, the role of ferroelectric domains is also explored\, supported by simulation and \nexperimental results. These results further emphasize the role of domains in ferroelectric systems for EO applications. \nAn on-chip EO modulator finds applications in various fields. Finally\, we examine the possibility of using the LNOI platform \nfor fiber optic gyroscope application. We integrated the different passive and active components needed for an on-chip \ninterferometric fiber optic gyroscope (IFOG) on the LNOI platform.\n\nTo summarise\, this thesis can be a guide to research works that explore new materials or new material growth techniques \nfor EO applications. The effect of fundamental properties of the material on device responses as well as qualifying characterisations \nare discussed. Finally\, an EO modulator is presented and its novel applications explored.
URL:https://www.cense.iisc.ac.in/event/thesis-defense-pockels-effect-based-on-chip-electro-optic-modulators-using-ferroelectric-materials/
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20250925T160000
DTEND;TZID=Asia/Kolkata:20250925T170000
DTSTAMP:20260423T172514
CREATED:20250922T093720Z
LAST-MODIFIED:20250922T094028Z
UID:9241-1758816000-1758819600@www.cense.iisc.ac.in
SUMMARY:[Talk]: Scaling on Schedule: Clever solutions that keep Moore’s law alive
DESCRIPTION:Name:\nKiran Chikkadi\n\n\nAffiliation \nFoundry Technology Development\, Intel Corporation\n\n\nTitle of Presentation:\nScaling on Schedule: Clever solutions that keep Moore’s law alive\n\n\nAbstract: \n \nFor over six decades\, engineers have strived to maintain the breakneck pace of exponential transistor scaling alive\, delivering a node every couple of years. This has required a series of innovative solutions rooted in engineering\, device physics and material science. This talk will outline a few of these key ideas\, starting with hi-k metal gate transistors all the way up to modern day gate-all-around transistors.\n\n\nBrief Biography: \n \nKiran Chikkadi is currently a Transistor Performance Integration Group Leader at Foundry Technology Development\, Intel. He completed his Doctorate and Masters in micro and nanosystems from ETH Zurich. His Bachelor’s degree in Electronics is from NITK Surathkal\, including a bachelor thesis conducted jointly at IISc in Prof. Navakant Bhat’s research group \n.
URL:https://www.cense.iisc.ac.in/event/talk-scaling-on-schedule-clever-solutions-that-keep-moores-law-alive/
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