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X-ORIGINAL-URL:https://www.cense.iisc.ac.in
X-WR-CALDESC:Events for CeNSE
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
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BEGIN:VTIMEZONE
TZID:Asia/Kolkata
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TZOFFSETFROM:+0530
TZOFFSETTO:+0530
TZNAME:IST
DTSTART:20240101T000000
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251124T090000
DTEND;TZID=Asia/Kolkata:20251202T170000
DTSTAMP:20260419T205811
CREATED:20250730T105504Z
LAST-MODIFIED:20250730T105504Z
UID:8763-1763974800-1764694800@www.cense.iisc.ac.in
SUMMARY:Advanced Training Program on Semiconductor Fabrication & Characterization
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/advanced-training-program-on-semiconductor-fabrication-characterization-7/
LOCATION:CeNSE\, IISc\, Bengaluru
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251208T080000
DTEND;TZID=Asia/Kolkata:20251219T170000
DTSTAMP:20260419T205811
CREATED:20251024T113139Z
LAST-MODIFIED:20251024T113139Z
UID:9452-1765180800-1766163600@www.cense.iisc.ac.in
SUMMARY:Winter School 2025
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/winter-school-2025/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251208T090000
DTEND;TZID=Asia/Kolkata:20251219T170000
DTSTAMP:20260419T205811
CREATED:20250730T105556Z
LAST-MODIFIED:20250915T125436Z
UID:8765-1765184400-1766163600@www.cense.iisc.ac.in
SUMMARY:Online Foundation Training on Semiconductor Fabrication and Characterization
DESCRIPTION:
URL:https://www.cense.iisc.ac.in/event/advanced-training-program-on-semiconductor-fabrication-characterization/#new_tab
LOCATION:CeNSE\, IISc\, Bengaluru
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251208T160000
DTEND;TZID=Asia/Kolkata:20251208T170000
DTSTAMP:20260419T205811
CREATED:20251126T045757Z
LAST-MODIFIED:20251126T045950Z
UID:9683-1765209600-1765213200@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Direct Integration of 2D Materials for Next Generation Electronic Devices
DESCRIPTION:Speaker: Prof. Zakaria (Zak) Y. Al Balushi\, Assistant Professor at the University of California\, Berkeley.\nTitle: "Direct Integration of 2D Materials for Next Generation Electronic Devices."\nDate: Monday\, December 8\, 2025 - Time: 4 PM\nHi Tea & Coffee: 5 PM\nVenue: CeNSE Seminar Hall\n\nAbstract:\n\nTwo-dimensional (2D) semiconductors\, such as molybdenum disulfide (MoS2)\, are emerging \nas key materials for next-generation electronics\, addressing challenges in the miniaturization \nof silicon-based technologies. Despite progress in scaling-up 2D materials\, integrating them \ninto functional devices remains challenging\, particularly in the context of three-dimensional \nintegration. In the first part of my talk\, I will present a scalable method for growing high-quality \nmono- to few-layer MoS2 on large wafers using a spin-on precursor\, molybdenum ethyl xanthate. \nThis approach facilitates the formation of a metastable amorphous molybdenum trisulfide phase\, \nwhich we can then be leveraged for direct heterogeneous integration. We thoroughly investigate \nthe growth dynamics and associated versatile features using comprehensive characterization\, \nreactive force-field molecular dynamics simulations\, and Density Functional Theory. \nOur method allows precise control over film thickness\, grain size\, and defect density\, \nyielding wafer-scale monolayer MoS2 with reliable optical properties comparable to as-exfoliated \nsamples. Additionally\, we achieve area-selective formation of MoS2 and the direct deposition \nof sub-5 nm high-k oxides using atomic layer deposition\, without the need for seeding or surface \nfunctionalization. This process enables the fabrication of complex superlattice structures\, \ntop-gated FETs\, and memristor devices\, all from a single-source chemistry. Our findings \nhighlight the versatility of spin-on metal xanthate chemistries for the synthesis and integration \nof transition metal dichalcogenides (MoS2\, WS2\, NbS2\, ReS2\, etc.)\, paving the way for advanced \nnanoscale fabrication processes and enhancing the commercial viability of 2D materials in electronics.\n\nMoreover\, forming heavily doped regions in two-dimensional materials\, like graphene\, is a \nsteppingstone to the design of emergent devices and heterostructures. In the second part of my talk\, \nI will present a selective-area approach to tune the work-function and carrier density in monolayer \ngraphene by spatially synthesizing sub-monolayer gallium beneath the 2D-solid.  Localized metallic \ngallium is formed via precipitation from an underlying diamond-like carbon (DLC) film that was \nspatially implanted with gallium ions. Controlling the interfacial precipitation process with \nannealing temperature allows for spatially precise ambipolar tuning of the graphene work-function \nthat remains stable even in ambient conditions. Our theoretical studies corroborated the role of \ngallium at the heterointerface on charge transfer and electrostatic doping of the graphene overlayer\, \nwith charge carrier densities from ~1.8×10^10 cm^(-2) (hole-doped) to ~7×10^13 cm^(-2) (electron-doped) \nas measured by in-situ and ex-situ measurements. The extension of this doping scheme to \nother implantable elements into DLC provides a new means of exploring the physics and \nchemistry of highly doped overlayed two-dimensional materials.\n\nFinally\, metalorganic chemical vapor deposition (MOCVD) has become a pivotal technique for developing \nwafer-scale TMD 2D materials. If time permits\, I will discuss our recent findings on the impact \nof MOCVD growth conditions on achieving uniform and selective polymorph phase control of \nMoTe2 over large wafers. We demonstrated the controlled and uniform growth of few-layer \nMoTe2 in pure 2H\, 1T’\, and mixed-phases at various temperatures on up to 4-inch C-plane \nsapphire wafers with hexagonal boron nitride templates. At 600oC\, high-quality 2H-MoTe2 \nwas obtained within a narrow temperature window\, verified with absorption and TEM analysis. \nIn addition\, we observed strong exciton-phonon coupling effects in multiwavelength Raman \nspectroscopy when the excitation wavelength was in resonance with the C-exciton. Our findings \nindicate that temperature-induced Te vacancies play a crucial role in determining the MoTe2 phase. \nThis study highlights the importance of precise control over the MOCVD growth temperature to \nengineer the MoTe2 phase of interest for device applications.\n\nBiography:\n\nZak Al Balushi is an assistant professor in the department of Materials Science and Engineering \nat University of California\, Berkeley\, and a faculty scientist in the Materials Science Division \nat the Lawrence Berkeley National Laboratory. Zakaria received his B.S. (2011)\, M.S. (2012) \nin Engineering Science and his Ph.D. (2017) in Materials Science and Engineering all from The \nPennsylvania State University. His early work focused on integration and fabrication of silicon\n nanowire devices\, then on the growth of group-III nitride semiconductors\, in situ metrology during \nMOCVD growth\, epitaxial graphene and the discovery and characterization of unconventional low-dimensional\n materials and heterostructures. Prior to his appointment at the University of California\, Berkeley\, \nhe held two postdoctoral fellowships: the Resnick Prize Fellowship in Applied Physics and Materials \nScience and the NSF Alliances for Graduate Education and the Professoriate (AGEP) Fellowship both at \nthe California Institute of Technology under the supervision of Professor Harry Atwater. At the University\n of California\, Berkeley\, his research group continues to expand in this area and beyond\, creating new \nsynthesis and integration schemes for emerging low-dimensional materials. He is currently serving on the\n editorial board of Communications Materials\, is an elected executive committee member for the American \nAssociation for Crystal Growth and recently named “Four rising stars who are reshaping nanoscience” by \nNature [Nature 608\, S12-S13 (2022)]. He is also a SK Hynix Faculty Fellow\, Society of Hellman Fellow\, \na CIFAR Azrieli Global Scholar in Quantum Materials and a recipient of the NSF CAREER and Micron \nCorporation Early Career Awards in 2022.\n\n\nHost Faculty:  Prof. Srinivasan Raghavan
URL:https://www.cense.iisc.ac.in/event/seminar-direct-integration-of-2d-materials-for-next-generation-electronic-devices/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251214T090000
DTEND;TZID=Asia/Kolkata:20251214T133000
DTSTAMP:20260419T205811
CREATED:20251210T042624Z
LAST-MODIFIED:20251211T092224Z
UID:9714-1765702800-1765719000@www.cense.iisc.ac.in
SUMMARY:Workshop on Quantum phenomena in materials and devices
DESCRIPTION:Workshop on Quantum phenomena in materials and devices\n\n\n\n\n14-12-2025\, CeNSE Seminar Hall\, IISc\n\n\n\n9.00-9.05: Introduction to the workshop and safety protocols\n\n\nSession 1\n\n\nChair: Pavan Nukala\n\n\n\n9.05-9.30 am\nPrasanna Sahoo (IIT Kgp)\n2D lateral heterostructures and optoelectronics\n\n\n9.30-9.55 am\nChandan Kumar (CeNSE\, IISc)\nPhonon dynamics in reconstructed twisted homo and hetero bilayer systems\n\n\n9.55-10.20 am\n Ranjan Singh (University of Notredame)\nTerahertz emergent phenomena in quantum materials: orbitals\, spins\, topology and ferrons\n\n\n10.20-10.45 am\nAkshay Singh (Physics\, IISc)\nWafer scale growth of 2D magnets\, and creating single photon emitters in 2D semiconductors\n\n\n10.45-11.10 am\nRitesh Agarwal (University of Pennsylvania)\nUtilizing geometry and topology for designing on-chip chiral photonic infrastructure: topological light meets topological quantum materials\n\n\n11.10-11.30\nTea Break\n\n\n\n\n\n\n\nSession 2\n\n\nChair: Chandan Kumar\n\n\n11.30-11.55\nArindam Ghosh (Physics\, IISc)\nCritical flow of charge and heat in ultra clean graphene\n\n\n11.55-12.20\nAbhishek  (JNCASR)\nWhen quantum meets topology\n\n\n12.20-12.45\nNagaphani A (SSCU\, IISc)\nModulation doping Mott insulators: how to dope and what constitutes doping?\n\n\n12.45-13.10\nPavan Nukala (CeNSE\, IISc)\nEngineering orbital order to disorder transition in rare earth nickelates\n\n\n13.10-14.30\nConclusion and Lunch in CeNSE cafeteria\n\n\n\n  \nDue to limited seating capacity\, only the individuals listed below have been selected for in-person participation on a first-come\, first-served basis. To ensure others are not left out\, we will also provide a hybrid link to attend the workshop\, subject to a few conditions. The attendees joining online will have view-only access. \nSelected list for In-person participation\n \nFunded by : QMD Hub  (IIT Delhi)\, one of the four hubs of NQM (https://www.qmdhub.co.in/)\n  \nLink for the hybrid mode.\n\nMicrosoft Teams Need help?\nJoin the meeting now\nMeeting ID: 461 958 569 607 92\nPasscode: oP67qn6H
URL:https://www.cense.iisc.ac.in/event/workshop-on-quantum-phenomena-in-materials-and-devices/
LOCATION:Seminar Hall – CeNSE
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251215T160000
DTEND;TZID=Asia/Kolkata:20251215T170000
DTSTAMP:20260419T205811
CREATED:20251126T050325Z
LAST-MODIFIED:20251126T050325Z
UID:9687-1765814400-1765818000@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Non-surgical bioelectronic implant for targeted focal brain stimulation
DESCRIPTION:Speaker: Dr. Shubham Yadav\, Postdoctoral Fellow at the Institute of Neuroinformatics\, University and ETH Zurich.\n\nTitle: "Non-surgical bioelectronic implant for targeted focal brain stimulation"\n\nDate: Monday\, December 15\, 2025 - Time: 4 PM\nTea & Coffee: 5 PM\n\nVenue: CeNSE Seminar Hall\n\n\nAbstract:\n\nBioelectronic implants hold tremendous promise for treating brain disorders\, yet their clinical \ntranslation is hindered by the need for invasive neurosurgery. We introduce Circulatronics\, \nan approach that leverages cell-electronics hybrids to enable non-surgical\, autonomous \nimplantation of bioelectronic devices to target brain regions. \n\nCentral to this work is the design and fabrication of subcellular-sized\, wireless\, \nphotovoltaic electronic devices that efficiently harvest optical energy. By covalently \ncoupling these devices to monocytes\, we create cell-electronic hybrids that autonomously \ntraffic through the vasculature and self-implant at sites of neuroinflammation. \nUsing this platform\, we demonstrate focal neuromodulation (30 µm resolution) in a rodent \nmodel without any surgical intervention. \n\nThis talk will discuss the engineering principles underlying device design\, the biological \nmechanisms enabling autonomous targeting and implantation\, and proof-of-concept results \ndemonstrating therapeutic potential. By merging electronic functionality with the inherent \ntransport and targeting capabilities of living cells\, Circulatronics represents a paradigm \nshift toward truly non-invasive neuromodulation.\n\nBiography:\n\nShubham Yadav is currently a Postdoctoral Fellow at the Institute of Neuroinformatics\, \nUniversity and ETH Zurich\, and a recent PhD graduate from the MIT Media Lab. He received \nthe B.Tech–M.Tech (Dual Degree) in Electrical Engineering from IIT Kanpur\, and completed \nhis S.M. in Media Arts and Sciences from MIT in 2021.  \n\nHis doctoral research focused on developing minimally invasive bioelectronic devices for \nprecise neural modulation without surgical intervention. He designed wireless\, subcellular-scale \nphotovoltaic devices coupled with cells to enable autonomous neural targeting and implantation. \nHis approach\, termed "Circulatronics"\, leverages cell trafficking through the vasculature to \nself-implant functional electronics to neuroinflammatory sites\, achieving focal neuromodulation \nat 30 µm resolution. During his PhD\, he was a Visiting Student at the Marine Biological Laboratories\, \nWoods Hole\, where he studied neural systems across diverse biological models. At ETH Zurich\, \nhe continues developing scalable bioelectronic platforms and is committed to creating accessible \ntechnologies that translate fundamental neuroscience into clinical solutions for neurological disorders.\n\nHost Faculty:  Prof. Vini Gautam
URL:https://www.cense.iisc.ac.in/event/seminar-non-surgical-bioelectronic-implant-for-targeted-focal-brain-stimulation/
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20251222T140000
DTEND;TZID=Asia/Kolkata:20251222T150000
DTSTAMP:20260419T205811
CREATED:20251217T045319Z
LAST-MODIFIED:20251217T045431Z
UID:9786-1766412000-1766415600@www.cense.iisc.ac.in
SUMMARY:[Thesis Defense] : Development of recessed-gate normally-off AlxGa1-xN/GaN HEMTs for power applications
DESCRIPTION:Thesis Title: “Development of recessed-gate normally-off AlxGa1-xN/GaN HEMTs for power applications” \n\nName of the Student: Mr. SHANTVEER KANTA\n\nSR No :  05-16-00-10-12-18-1-15901\n\nDegree Registered: Ph.D. Engineering  \n\nAdvisor: Prof. Srinivasan Raghavan\, Prof. Navakanta Bhat\, CeNSE  \n\nDate: 22nd December 2025 (Monday)\, Time: 2 PM \n\nVenue: Seminar Hall\, CeNSE :https://shorturl.at/I7QRl\n\nAbstract:\n\nThe push for higher efficiency and power density in power electronics has accelerated the development \nof AlGaN/GaN high electron mobility transistors (HEMTs). The formation of a two-dimensional electron \ngas (2DEG) at the AlGaN/GaN heterointerface\, combined with the wide bandgap of GaN\, offers key \nadvantages such as high on-state current and high breakdown voltage - making these devices highly \nattractive for high-voltage switching applications. However\, their native normally-on behaviour requires \na constant negative gate bias to keep the device in the off-state\, which increases circuit complexity and \nraises reliability concerns. In contrast\, normally-off (enhancement-mode) operation is preferred for safe \nand fail-secure switching\, along with the benefit of simplified gate drive circuitry. Despite significant \nprogress\, achieving a high and reliable threshold voltage (Vth) in normally-off AlGaN/GaN HEMTs remains a \ncritical challenge.\n\nThis thesis focuses on the design\, fabrication\, and characterization of recessed-gate AlGaN/GaN MIS-HEMTs \nto enable reliable normally-off operation. The work begins with a detailed analysis of Vth requirements\, \nhighlighting the need for Vth ≥ 3 V to prevent parasitic turn-on. One effective way to achieve high Vth \nis by utilizing negative trapped charges within the insulator. In this context\, the presence of negative \noxide traps in atomic layer deposited (ALD) Al2O3 is experimentally validated as an effective mechanism \nto shift the threshold voltage positively and achieve enhancement-mode operation.\n\nSubsequently\, the fabrication of high-Vth MIS-HEMTs is demonstrated using a recessed-gate architecture \nand low-damage digital etching. Gate programmability and retention behaviour are studied to assess Vth \nstability over time. A Vth of 6 V was achieved after the application of an 11 V gate program voltage\, \nwith the device exhibiting good retention characteristics. Dynamic measurements are then used to \ninvestigate Vth hysteresis and its effect on switching delays under various gate voltage conditions\, \nconfirming minimal impact on turn-off behaviour.\n\nThe next part addresses interface engineering through ex-situ plasma pretreatments to enhance the \nAl2O3/GaN interface. Treatments such as N2 and NH3 + N2 plasmas are found to significantly improve drain \ncurrent\, field-effect mobility\, and reduce interface trap density\, whereas N2O treatment leads to performance \ndegradation due to GaN surface reoxidation. Devices subjected to N2 plasma pretreatment exhibited enhancements \nof 123% in the maximum drain-current and 107% in the maximum field-effect mobility\, alongside a 56% reduction \nin threshold voltage hysteresis compared to untreated devices.  Frequency dependent C-V analyses confirmed a \nsignificant reduction in interface trap density for both N2 and NH3+N2 treatments\, with the latter achieving \na 46.8% reduction in interface traps compared to untreated devices.\n\nTo further improve Vth stability and suppress gate leakage\, a bilayer dielectric stack combining PECVD SiO2 \nand ALD Al2O3 is implemented. This bilayer approach demonstrates enhanced retention\, lower Vth shift under \nbias stress\, and a higher gate breakdown voltage\, making it a robust solution for high-voltage GaN power devices.\n\nOverall\, this thesis contributes critical insights into threshold voltage engineering\, interface optimization\, \nand dielectric reliability - key enablers for advancing normally-off AlGaN/GaN MIS-HEMTs in next-generation power electronics.
URL:https://www.cense.iisc.ac.in/event/thesis-defense-development-of-recessed-gate-normally-off-alxga1-xn-gan-hemts-for-power-applications/
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