BEGIN:VCALENDAR
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PRODID:-//CeNSE - ECPv6.15.17.1//NONSGML v1.0//EN
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X-WR-CALNAME:CeNSE
X-ORIGINAL-URL:https://www.cense.iisc.ac.in
X-WR-CALDESC:Events for CeNSE
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:Asia/Kolkata
BEGIN:STANDARD
TZOFFSETFROM:+0530
TZOFFSETTO:+0530
TZNAME:IST
DTSTART:20250101T000000
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BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260306T090000
DTEND;TZID=Asia/Kolkata:20260306T173000
DTSTAMP:20260417T134825
CREATED:20260303T074236Z
LAST-MODIFIED:20260303T074331Z
UID:9980-1772787600-1772818200@www.cense.iisc.ac.in
SUMMARY:Perovskite workshop
DESCRIPTION:CONFERANCE SCHEDULE \nRegistration is Closed!
URL:https://www.cense.iisc.ac.in/event/perovskite-workshop/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260306T160000
DTEND;TZID=Asia/Kolkata:20260306T173000
DTSTAMP:20260417T134825
CREATED:20260304T063310Z
LAST-MODIFIED:20260304T063310Z
UID:9988-1772812800-1772818200@www.cense.iisc.ac.in
SUMMARY:[Seminar]: Superfluid Helium-3 Under Nanoscale Confinement
DESCRIPTION:Speaker: Dr Vaisakh Vadakkumbatt\, Assistant Professor\, Cryogenic Engineering Centre\, IIT Kharagpur.\nTitle: “Superfluid Helium-3 Under Nanoscale Confinement“\nDate: Friday\, 6th March 2026 – Time: 4 PM\nHi Tea & Coffee: 5 PM\nVenue: CeNSE First Floor-MMCR\nAbstract:\nHelium-3 is a remarkable form of quantum matter that remains in the liquid state all the way down to absolute zero temperature due to its small atomic mass and weak interatomic interactions. When cooled to millikelvin temperatures\, it becomes a superfluid\, flowing without friction and exhibiting macroscopic quantum effects. \nIn this talk\, I will first explain how such extremely low temperatures are achieved and how they are accurately measured in the laboratory. I will then discuss how the properties of superfluid helium-3 change under nanoscale confinement compared to the bulk. Confinement modifies the morphology of the bulk superfluid phases and can lead to the emergence of a new stable state between them.\n\nBiography:\n \nDr. Vaisakh Vadakkumbatt completed his Integrated PhD in Physics at the Indian Institute of Science. After graduation\, he worked as a Postdoctoral Fellow at the University of Alberta. He is currently an Assistant Professor at the Indian Institute of Technology Kharagpur. His research interests include the exploration of novel applications of quantum fluids and the development of ultra-low-temperature systems.\n\nHost Faculty:  Prof. Ambarish Ghosh
URL:https://www.cense.iisc.ac.in/event/seminar-superfluid-helium-3-under-nanoscale-confinement/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260311T160000
DTEND;TZID=Asia/Kolkata:20260311T170000
DTSTAMP:20260417T134825
CREATED:20260227T103544Z
LAST-MODIFIED:20260227T103544Z
UID:9953-1773244800-1773248400@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Two-qubit quantum gates in an ion-atom hybrid system
DESCRIPTION:Speaker: Prof. Bimalendu Deb\, Professor\, School of Physical Sciences\, Indian Association for the Cultivation of Science (IACS)\,\n\nJadavpur\, Kolkata.\n\nTitle: "Two-qubit quantum gates in an ion-atom hybrid system"\n\nDate: Wednesday\, 11th March 2026 - Time: 4 PM\n\nTea & Coffee: 5 PM\n\nVenue: CeNSE Seminar Hall\n\nAbstract:\nWe propose an ion-atom hybrid system for quantum computing. We demonstrate the universal \ntwo-qubit CNOT gate with 89.9% fidelity between an ionic and an atomic qubit relying on \nRydberg excitation of the atom and the resulting phonon blockade in the motional states of \nthe ion [S. Mudli and B. Deb\, https://arxiv.org/abs/2602.19222v1]. We further demonstrate a \nuniversal two-qubit gate operation with 97% fidelity between two neutral atom qubits based \non ion-mediated interactions [S. Mudli et al. Phys. Rev. A 110\, 062618 (2024)].  These demonstrations \nsuggest that an ion-atom hybrid system can serve as a module of a quantum network for distributed \nquantum computing\, leveraging the best features of charged as well as neutral atom qubits.\n\nBiography:\n\nBimalendu Deb is a Professor of Physics\, at the School of Physical Sciences\, Indian Association \nfor the Cultivation of Science (IACS)\, Jadavpur\, Kolkata. He obtained a PhD (Science) from Jadavpur \nUniversity in 1997. He has more than thirty years of experience in research and teaching in atomic\, \nmolecular and optical sciences. His current research interests include theoretical quantum optics\, \nquantum computing and quantum sensing\, cold atomic collisions\, and related fields. Recently\, he has \npublished a book titled “Low energy collision physics: Applications to cold atoms\, published by IOP \npublishing [https://iopscience.iop.org/book/mono/978-0-7503-3959-9]. This book can be used as a \ngraduate text in collision theory and may serve as a bridge between teaching and research in cold atom science. \n\nHost Faculty:  Prof. Akshay Naik
URL:https://www.cense.iisc.ac.in/event/seminar-two-qubit-quantum-gates-in-an-ion-atom-hybrid-system/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260313T160000
DTEND;TZID=Asia/Kolkata:20260313T170000
DTSTAMP:20260417T134825
CREATED:20260227T105823Z
LAST-MODIFIED:20260227T105823Z
UID:9957-1773417600-1773421200@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Engineering Intelligent Nanomaterials for Cancer and Space Therapeutics
DESCRIPTION:Speaker: Dr Swathi Sudhakar\, Assistant Professor\, Department of Applied Mechanics and Biomedical Engineering\,\n\nIIT Madras.\n\n\nTitle: "Engineering Intelligent Nanomaterials for Cancer and Space Therapeutics"\n\nDate: Friday\, 13th 2026 - Time: 4 PM\n\nHi Tea & Coffee: 5 PM\n\nVenue: CeNSE First Floor-MMCR\n\nAbstract:\nLiving systems in cancer and space are shaped by extreme and dynamic forces that challenge \nconventional therapeutics. This talk presents a unified nanomaterials framework in which structure\, \nmechanics\, and energy transduction are engineered to achieve function under such conditions. \nI will showcase thermostable nanoarchaeosomes that preserve bioactivity for cancer immunotherapy\, \nprotein nanocages that enable programmable molecular confinement and transport\, and active micromotors \nthat convert external stimuli into directed motion and localized action. By connecting material \narchitecture with biological response—particularly under microgravity—this work demonstrates how \nadaptive\, intelligent nanomaterials can bridge fundamental nanoscience and resilient therapeutics \nfor both Earth-based medicine and space exploration.\n\nBiography:\nDr. Swathi Sudhakar is an Assistant Professor in the Department of Applied Mechanics and \nBiomedical Engineering at IIT Madras. She earned her PhD in Biology (summa cum laude) from \nEberhard Karls University of Tübingen\, Germany. A gold medalist in her Bachelor’s and Master’s \ndegrees\, she received the Reinhold und Maria Teufel-Stiftung Doctoral Award for an outstanding \ndissertation. She is also a recipient of the Humboldt Fellowship\, the Tamil Nadu State Government \nYoung Scientist Award\, and the Merck Young Scientist Award. Her research focuses on nanotherapeutics\, \nspace medicine\, and single-molecule biophysics. She has published in Science and Nature Microgravity\, \nfiled over 28 patents (with 10 granted)\, and leads multiple nationally and internationally funded research projects\n\nHost Faculty:  Prof. Vini Gautam
URL:https://www.cense.iisc.ac.in/event/seminar-engineering-intelligent-nanomaterials-for-cancer-and-space-therapeutics/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260317T110000
DTEND;TZID=Asia/Kolkata:20260317T120000
DTSTAMP:20260417T134825
CREATED:20260312T070603Z
LAST-MODIFIED:20260312T070603Z
UID:10075-1773745200-1773748800@www.cense.iisc.ac.in
SUMMARY:[Thesis Defense] : CVD of Graphene: 2D Crystal Growth Model\, Grain Size Control\, and Scalable Transfer via Mechanical Delamination
DESCRIPTION:Thesis Title: "CVD of Graphene: 2D Crystal Growth Model\, Grain Size Control\, and Scalable Transfer \nvia Mechanical Delamination"\n\nName of the Student: Mr. Suman Kumar Mandal\n\nDegree Registered: Ph.D. Engineering  \n\nAdvisor:  Prof. Srinivasan Raghavan\, CeNSE\n\nDate: 17th March 2026\, Time: 11 AM \n\nVenue:  Hybrid  : Seminar Hall\n\nAbstract:\n\nThe synthesis of large-area two-dimensional (2D) materials via chemical vapor deposition (CVD) \nhas garnered significant attention due to their potential in diverse applications. \nThe deposition of these materials from the vapor phase occurs by the nucleation of atomically \nthin crystalline layers and the subsequent motion of the edges or steps that bound the nuclei. \nMost theories of crystal growth that address the motion of atomic steps were developed before the \nmore recent advent of 2D materials. They typically fall into two buckets. One\, based on the Burton-Cabrera-Frank (B.C.F.) \ntheory that envisions growth through attachment of atoms to a thermally rough edge. A second approach \nis based on the so-called 1D nucleation mechanism\, which suggests growth via nucleation and propagation \nof atomic rows along smooth edges.\n\nAs summarized in this thesis\, they have shortcomings. To address these deficiencies and build upon their \nideas\, a comprehensive analytical framework has been developed to investigate the growth kinetics of 2D \nmaterials. Graphene grown on copper serves as the model experimental system. To the best of our knowledge\, \nthe development of a theory and its application to 2D growth to test validity has not been done before. \nFor atomically thin graphene edges\, a two-step growth mechanism involving double-kink nucleation at crystal \nedges followed by subsequent attachment of additional units to these features is proposed. As in the B.C.F. \nand other subsequent theories\, a structure of the edge is first arrived at and modelled in terms of a kink density. \nThe differences between the previous models and the one proposed in this thesis are highlighted\, along with \nphysico-chemical parameter regimes in which they converge. Based on the interplay at these edges with the growth \nambient\, four distinct growth modes were identified: mono-nuclear row-by-row\, poly-nuclear row-by-row\, poly-nuclear multi-row\, \nand dendritic modes that depend on crystal morphology\, size\, supersaturation\, and substrate chemistry. All three main aspects of\n 2D growth\, growth velocity\, saturation nucleation density\,  and coverage with time\, are predicted. It is also shown that using \nthis model\, 2D growth can be used as a probe to determine surface supersaturation\, a parameter that is not otherwise available.\n\nLeveraging this mechanistic understanding\, this thesis demonstrates the ability to control graphene grain size\n through supersaturation modulation\, achieving a two-order-of-magnitude tunability. Additionally\, the critical\n role of trace oxygen impurities in the copper substrate is discussed\, which is found to significantly impact \nthe morphology of graphene single crystals and the grain size in the full-coverage polycrystalline film. \nUnderstanding and modelling the growth mechanism of 2D edges is crucial as it directly influences grain size\, \na critical parameter determining the suitability of 2D materials for specific applications. For instance\, \nlarge graphene grains are advantageous for electronics and impermeable barrier applications\, while smaller \ngrains are preferred for chemical sensors.\n\nFinally\, to bridge the gap between synthesis and practical applications\, a scalable mechanical delamination \nmethod has been developed to transfer graphene films from copper to a target polymer substrate. This method \novercomes the limitations of the conventional wet-transfer technique\, resulting in large-area\, defect-free\, \nand affordable transferred graphene. The delaminated graphene exhibits state-of-the-art moisture \nimpermeability of 2.7x10-3 grams/m^2/day over a large area of 1-inch^2\, demonstrating its potential for \nultra-high moisture barrier applications.\n\nIn summary\, this thesis provides a foundational understanding of the growth kinetics of 2D materials\, \nenabling control over their grain size for specific applications. Moreover\, the development of an efficient \ntransfer method brings us closer to realizing the full potential of CVD-grown graphene in various technological domains.
URL:https://www.cense.iisc.ac.in/event/thesis-defense-cvd-of-graphene-2d-crystal-growth-model-grain-size-control-and-scalable-transfer-via-mechanical-delamination/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260320T160000
DTEND;TZID=Asia/Kolkata:20260320T170000
DTSTAMP:20260417T134825
CREATED:20260313T094037Z
LAST-MODIFIED:20260313T094201Z
UID:10093-1774022400-1774026000@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Illuminating Hidden Currents in Quantum Materials
DESCRIPTION:Speaker: Prof. Satyajit Banerjee\, Professor\, Department of Physics\, IIT Kanpur.\n\nTitle: "Illuminating Hidden Currents in Quantum Materials"\n\nDate: Friday\, 20th March 2026 - Time: 4 PM\n\nTea & Coffee: 5 PM\n\nVenue: CeNSE Seminar Hall\n\nAbstract:\n\nElectrical transport measurements usually reveal only averaged properties of materials\, \noften concealing important spatial variations in electronic behaviour. In this talk\, \nI will describe how\, in my lab\, we use magneto-optical imaging to directly map spatial \ncurrent flow in quantum materials with high sensitivity and micron-scale resolution. \nBy imaging the magnetic fields generated by transport currents\, we reconstruct the local \ncurrent distribution and uncover hidden electronic phenomena. I will present examples \nfrom several systems\, including the topological insulator Bi₂Se₃\, where surface and \nbulk currents coexist\, as well as correlated materials exhibiting metal–insulator \ntransitions and unconventional superconductivity. These studies demonstrate how real-space \nimaging of current provides new insights into emergent electronic phases in complex materials.\n\nBiography:\n\nDr. Satyajit Banerjee is a Professor in the Department of Physics at the Indian Institute of Technology Kanpur\, \nwhere he has been a faculty member since 2004. His interests lie in research and teaching. \nHis research focuses on experimental condensed-matter physics\, with a particular emphasis \non superconductivity\, vortex matter\, and emergent phenomena in quantum materials. He has developed advanced \nmagneto-optical and current-imaging techniques to probe current flow and non-equilibrium dynamics in superconductors and other quantum \nmaterial systems\, such as topological insulators and 2D materials. He continues to focus on the development of quantum-material \nheterostructure-based devices and technologies\, as well as pushing the sensitivity limits of instruments. \nDr. Banerjee received his Ph.D. from the TIFR Mumbai and was a Feinberg Postdoctoral Fellow \nat the Weizmann Institute of Science. He has authored over 90 peer-reviewed publications\, \nincluding several in Physical Review Letters\, and holds multiple patents in superconducting devices and imaging technologies.  \n\nHost Faculty:  Prof. Chandan Kumar
URL:https://www.cense.iisc.ac.in/event/seminar-illuminating-hidden-currents-in-quantum-materials/
LOCATION:Seminar Hall – CeNSE
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260323T160000
DTEND;TZID=Asia/Kolkata:20260323T170000
DTSTAMP:20260417T134825
CREATED:20260317T103650Z
LAST-MODIFIED:20260317T103650Z
UID:10146-1774281600-1774285200@www.cense.iisc.ac.in
SUMMARY:[Seminar] : Using integrative Electron Paramagnetic Resonance (EPR) spectroscopy to understand membrane protein structure\, function and dynamics
DESCRIPTION:Speaker: Prof. Christos Pliotas from the University of Manchester.\n\nTitle: "Using integrative Electron Paramagnetic Resonance (EPR) spectroscopy \nto understand membrane protein structure\, function and dynamics"\n\n\nDate: Monday\, 23rd March 2026 - Time: 4 PM\nTea & Coffee: 5 PM\nVenue: CeNSE Seminar Hall\n\n\nAbstract:\n\nElectron Paramagnetic Resonance (EPR) spectroscopy has emerged as a powerful tool over the last \ndecade for assessing protein conformation\, folding\, oligomerisation\, and dynamics. \nEPR distance measurements provide high-resolution quantitative information on protein equilibria\, \ndovetailing well with techniques such as X-ray crystallography\, Hydrogen Deuterium Exchange (HDX)\n mass spectrometry\, cryoEM\, and computational approaches such as molecular dynamics simulations\, \nas a key part of integrative structural biology. An inherent limitation in membrane protein studies \nis the need to remove the protein from its natural membrane environment. However\, recent developments \nhave provided lipid scaffolds that mimic this environment and offer flexibility in lipid composition\, \nwhile EPR measurements on membrane proteins can also be performed in cells. Here\, I will focus on the \napplication of pulsed EPR spectroscopy (PELDOR\, or DEER) to the study of integral membrane proteins\, \nhighlighting recent case studies from my lab. I will explore conformational landscapes in human \npotassium K2P channels\, an allosteric mechanism that regulates mechanosensitive ion channels\, \ninhibition asymmetry in membrane Pyrophosphatases\, pH dependence in secondary transporters\, \ndrug binding in human TRPC channels\, and the effect of antibiotics on the conformation of the BAM \ncomplex\, with measurements performed in intact cells.\n\nBiography:\nDr Christos Pliotas obtained a BSc in Physics (University of Athens\, Greece) and an MSc in \nMedical Physics (University of Aberdeen\, UK). He then pursued a PhD in membrane ion channel \nproteins at the Institute of Medical Sciences\, University of Aberdeen. Christos then completed \na postdoc specialising in structural biology of membrane proteins and Electron Paramagnetic \nResonance (EPR) spectroscopy at the University of St Andrews\, UK\, with James H. Naismith FRS. \nHe was subsequently awarded a Royal Society of Edinburgh Fellowship to become a principal \ninvestigator at the Biomedical Sciences Research Complex\, University of St Andrews. \nChristos then moved to the Astbury Centre for Structural Molecular Biology at the \nUniversity of Leeds in October 2018\, where he was an Assistant Professor in Integrative \nMembrane Biology. During his time in Leeds\, he received a BBSRC New Investigator Award (2019) \nand the Sir Robin MacLellan Award (2022). As of June 2023\, Christos has moved to the School of \nBiological Sciences\, University of Manchester\, as a Reader in membrane protein structural biology\, \nwhere he leads the newly launched BioEmPiRe Centre for Structural Biological EPR Spectroscopy.  \n\nHost Faculty:  Prof. Manoj Varma
URL:https://www.cense.iisc.ac.in/event/seminar-using-integrative-electron-paramagnetic-resonance-epr-spectroscopy-to-understand-membrane-protein-structure-function-and-dynamics/
END:VEVENT
BEGIN:VEVENT
DTSTART;TZID=Asia/Kolkata:20260327T160000
DTEND;TZID=Asia/Kolkata:20260327T170000
DTSTAMP:20260417T134825
CREATED:20260324T110836Z
LAST-MODIFIED:20260324T110836Z
UID:10157-1774627200-1774630800@www.cense.iisc.ac.in
SUMMARY:[Thesis Colloquium] : Development and Study of HEMTs on Buffer-Free GaN-on-SiC for High Power Radio-Frequency Applications
DESCRIPTION:Thesis Title: "Development and Study of HEMTs on Buffer-Free GaN-on-SiC for High Power Radio-Frequency Applications"\n\nName of the Student: Mr. Amit Bansal\n\nDegree Registered: Ph.D. Engineering \n\nAdvisors: Prof. Digbijoy Nath CeNSE\n\nDate: 27th March 2026\, (Friday)\, 4 PM\n\nVenue : CeNSE Seminar Hall \n\nAbstract:\n\nWide bandgap semiconductors like Gallium Nitride (GaN) based high electron mobility \ntransistors (HEMTs) hold great promise for high frequency power applications thanks \nto the material properties of higher saturation velocity and breakdown voltage when \ncompared to the traditional semiconductors. GaN-on-SiC stacks have lower dislocation \ndensity\, higher themal conductivity and higher electrical resitivity as compared to \nGaN-on-Si stacks. Conventionally\, thick doped buffer layers are required to relax \nstrain arising due to lattice mismatch between substrate and GaN\, and reduce the \ndislocation density. However\, intentional dopants act as trapping centers for electrons \nresulting in current collapse\, and reduction in power added efficiency. An alternate \napproach uses buffer-free stack with AlN acting as the back barrier. \n\nTo validate the opportunity presented by buffer-free GaN-on-SiC HEMTs\, baseline \nperformance was optimized using ex-situ MOCVD SiN as gate dielectric. The MISHEMTs \nexhibited higher 2DEG and reduced gate lag 4-6 %. Finally\, under 28 V Class B pulsed \noperation for C-band and X-band\, record output power in buffer-free stacks was obtained \nfor 0.1 mm periphery devices. Drain current transient studies were also performed to \ndetermine the nature of trap signatures on buffer-free devices. In a device without \nany gate dielectric\, a surface trap with trap activation energy of 0.68 eV was identified. \nOn the other hand\, a device with thin gate dielectric was able to suppress the surface \ntrap states and instead hinted at localized epitaxial defects.\n\nNext\, 8-finger MISHEMTs based on T-gate with slanted mini-field plates architecture \nand air-bridges were fabricated to boost the performance. To fabricate the T-gate\, a \nrecipe combining dry etch and wet etch was developed to selectively etch PECVD SiN \nwithout adversely impacting MOCVD SiN. A lower drain lag was obtained for T-gate HEMT \nas compared in rectangular gates due to better electric field management. T-gate device \nreported more linear power gain with 5.1 W/mm power\, almost twice that of a rectangular device.\n\nFinally\, a systemic study was undertaken to investigate the impact of varying unit \ngate width and number of fingers on performance of HEMTs. 2 finger devices reported \nhigher drain current density which gradually declined for multi-finger devices by as \nmuch as 31 % due to self-heating effect\, but a lower decline of 13 % was seen for pulsed \nmeasurements. For 25 V bias Class AB operation at 6 GHz\, record output power of 9.3 W and\n 5.5 W respectively were measured under pulsed loadpull conditions for 8×125 μm and 12×125 μm.\n\nTo summarise\, HEMT performance was optimized for buffer-free GaN-on-SiC using ex-situ MOCVD SiN \nas gate dielelectric and T-gate architecture\, and multi-finger HEMTs were demonstrated to \ndeliver high-power for RF applications
URL:https://www.cense.iisc.ac.in/event/thesis-colloquium-development-and-study-of-hemts-on-buffer-free-gan-on-sic-for-high-power-radio-frequency-applications/
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