Welcome to the Heterojunction Lab…

We design, fabricate and test novel electronic devices. Our speciality is in integrating different semiconductor materials with each other, e.g. silicon with metal-oxides or germanium to silicon. Such heterogenous integration introduces novel functionality and improves performance for the next generation of electronic devices.

Sushobhan Avasthi

Assistant Professor

Saloni Chaurasia

PhD Student

Pramod Ravindra

PhD Candidate

Vineet Kumar Singh

Research Associate

Rudra Mukherjee

Ph.D Candidate

Khushboo Kumari

PhD Student

Arun Singh Chouhan

Ph.D. Student

Vivek Singh

PhD Candidate

Naga Prathibha Jasti

Project Assistant

Mahek Mehta

PhD Candidate

News

Talk

Pramod, Arun, Khushboo, Nishanth, and Rudra will be presenting at the CeNSE Student Symposium 2017 from Feb 3rd to 4th 2017. Check out Talks for details.

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Talk, Conference

Arun, Khushboo, Pramod, Rudra, and Saloni will be attending the 2017 MRS Spring Meeting held at Phoeniz, AZ, USA from April 17th to 21st 2017. Altogether the lab will be presenting 2 oral and 4 poster papers at the conference.

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Conference

Pramod, Saloni, Vineet, and Khushboo will be presenting their work the International Conference of Young Researchers on Advanced Materials (ICYRAM) organized by the International Union of Materials Research Societies (IUMRS) and Materials Research Society, India held at Bangalore, India. The lab presented 5 papers at the conference.

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Conference

Sushobhan will be attending the 43rd 2016 IEEE Photovoltaic Specialists Conference held at Portland, OR, USA. Sushobhan also present a poster titled “3D Ti/TiO$_2$ photoelectrodes for sensitized solar cells”

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Award, Conference

Pramod won a Best Poster Award at 2016 MRS Spring Meeting held at Phoeniz, AZ, USA. Pramod’s poster titled, “Electron-blocking Properties of Cu$_2$O/Si Heterojunction for Photovoltaics” experimentally demonstrated a novel Si/Cu$_2$O heterojunciton solar cell with record efficiency.

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Select Publications

In contrast to the numerous reports on narrow-bandgap heterojunctions on silicon, such as strained Si1−xGex on silicon, there have been very few accounts of wide-bandgap semiconducting heterojunctions on silicon. Here, we present a wide-bandgap heterojunction—between titanium oxide and crystalline silicon—where the titanium oxide is deposited via a metal-organic chemical vapor deposition process at substrate temperatures of only 80–100 °C. The deposited films are conformal and smooth at the nanometer scale. Electrically, the TiO2/Si heterojunction prevents transport of holes while allowing transport of electrons. This selective carrier blocking is used to demonstrate a low-temperature processed silicon solar cell.
APL 102, 203901 (2013)
Details Full-text Online

A hybrid approach to solar cells is demonstrated in which a silicon p–n junction, used in conventional silicon-based photovoltaics, is replaced by a room-temperature fabricated silicon/organic heterojunction. The unique advantage of silicon/organic heterojunction is that it exploits the cost advantage of organic semiconductors and the performance advantages of silicon to enable potentially low-cost, efficient solar cells.
Adv. Mater. 2011, 23, 5762–5766
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In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface. The band-bending at the PQ-passivated silicon surface is negligible for both n- and p-type substrates, demonstrating a low density of surface defects. Finally we show that PQ forms a semiconducting wide-bandgap type-I heterojunction with silicon.
Surf. Sci. 605 (2011) 1308–1312
Details Full-text Online

Other Recent Publications

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Recent & Upcoming Talks

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Projects

Contact

  • savasthi@cense.iisc.ernet.in
  • TF-14, Centre for Nano Science and Engineering. Indian Institute of Science, Bangalore 560012, India
  • In case of emergency please contact +91 9902333360
  • EPABX phone number (only available on CeNSE intranet): 414