Alumni

Lakshmi Ganapathi K

Lakshmi Ganapathi K

PhD (2015)

Email: klganapathi@gmail.com 
Phone: +91 991695596
Linkedin Profile: Lakshmi Ganapathi Kolla

Current Position
INSPIRE Faculty at Dept of Physics, IIT-Madras

Experience
• INSPIRE Faculty at Dept of Physics , IIT-Madras from 05-06-2017 – present
• Research Associae at CeNSE, IISc from 31-07-2017 to 04-06-2017

Theses Title (Year)
Optimization of HfO2 Thin films for Gate Dielectric Applications 2-D layered materials (2014)

Research Area
Devices on 2D Materials

Publications
• K. L. Ganapathi, S. Bhattacharjee, S. Mohan and N. Bhat, “High Performance HfO2 Back Gated Multilayer MoS2 transistors,” IEEE Electron Device Letters (EDL), vol. 37, 6, 797-800 (2016).

• S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan, N. Bhat, “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs”, Adv. Electron. Mater., 1600358, (2016).

• *S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, ”Surface States Engineering of metal/MoS2 contacts using Sulfur Treatment for Reduced Contact Resistance and Variability,” IEEE Transactions on Electron Devices (TED), vol. 63, 6, 2556-2562 (2016).(* Authors equally contributed).

• S. Bhattacharjee, K. L. Ganapathi, D. N. Nath and N. Bhat, “Intrinsic limit for contact resistance in exfoliated multilayer MoS2 FET,” IEEE Electron Device Letters, vol.37, No.1 (2016). (DOI:10.1109/LED.2015.2501323).

• A. Suresh, K. L. Ganapathi and S. Uthanna, “Electrical, optical, structural and chemical properties of Al2TiO5 films for high- gate dielectric applications,” Accepted with minor revision: Materials Science in Semiconductor Processing, 57, 137-146 (2016).

• S. Mukhopadhyay, S. Mitra, Y. M Ding, K. L. Ganapathi, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C.S. Wajda, G.J Leusink, Effectof Post Plasma Oxidation on Ge Gate Stacks Interface Formation,” ECS Transactions, vol. 72(4), 303-312 (2016).

• H. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D.N. Nath, “Optical Phonon limited high field transport in layered materials” IEEETransactions on Electron Devices (TED), (2016). (DOI:10.1109/TED.2015.2508036).

• *S. Bhattacharjee, *K. L. Ganapathi, D. N. Nath and N. Bhat, ”Sulfur Treatment for Schottky Barrier Reduction in metal/ MoS2 contacts{ A new proposal for Contact Engineering on TMD’s,” (*Authors equally contributed) http://arxiv.org/abs/1508.03795

• K. L. Ganapathi, N. Bhat, and S. Mohan, “Influence of O2 flow rate HfO2 gate dielectrics for back gated graphene transistors,” Semicond. Sci.Technol., vol. 29, 055007 (2014). (DOI: 10.1088/0268-1242/29/5/055007).

• K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of HfO2 films for high transconductance back gated graphene transistors,” Appl. Phys.Lett., vol. 103, 073105 (2013). (DOI: 10.1063/1.4818467).

• M. A. Jithin, K. L. Ganapathi, N. Bhat, S. Mohan, Y. Morozumi, and S.Kaushal, “Pulsed DC Magnetron Sputtered Rutile TiO2 Thin Films for Next Generation DRAM Capacitors,” Mater. Res. Soc. Symp. Proc., vol.1561 (DOI: 10.1557/opl.2013.823).

• K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of oxygen flow rate for e-beam evaporated HfO2 films,” Proc. Int. Conf. Emerging Electronics (ICEE), DOI: 10.1109/ICEmElec.2012.6636257, pp. 82-85, Dec.2012.

• K. L. Ganapathi, S. Mukhopadhyay, S. Mitra, Y. M Ding, D. Misra, N. Bhat, K. Tapily, R. D. Clark, S. Consiglio, C.S. Wajda, G.J Leusink, “Effect of Slot Plane Anetna Oxidation on Ge Gate Stacks Interface Formation,” To be submitted to IEEE Transactions on Device and Materials Reliability (IEEE TDMR) .

• *S. Bhattacharjee, *K. L. Ganapathi, S. Mohan and N. Bhat, “Functionalization free e-beam based 30 nm HfO2 top gate for high performance MoS2 FETs,” To be submitted (* Authors equally contributed).

• K. L. Ganapathi, N. Bhat, and S. Mohan, “Optimization of TiN films for CMOS gate electrode applications,” To be submitted.

• K. L. Ganapathi, N. Bhat, and S. Mohan, “Reactive Electron Beam Evaporated Hafnium Oxide Films for Gate Dielectric Applications in 2-D materials,” Manuscript in preparation.