Students

Education
• B.E (ECE) (2011) – Manipal Institute of Technology, Manipal, Karnataka. India.
• M.Tech (Microelectronics) (2014) – Indian Institute of Technology, Bombay (IITB). India.

Experience
• Process Integration Engineer, Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), (Aug 2014 – Feb 2016).

Research Area
Devices on 2D Materials

Publications
• S. Gupta, P. Paramahans Manik, Ravi Kesh Mishra, A. Nainani, M. C. Abraham and S. Lodha, “Contact resistivity reduction through interfacial layer doping in metal-interfacial layer – semiconductor contacts,” Journal of Applied Physics, vol. 113, pp. 234505, 2013.

• Prashanth Paramahans Manik, Ravi Kesh Mishra, V. Pavan Kishore, Prasenjit Ray, Aneesh Nainani, YiChiau Huang, Mathew C. Abraham, Udayan Ganguly and Saurabh Lodha, “Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer, ” Applied Physics Letters, vol. 101, pp. 182105, 2012.

Conference and Seminars
• P.P.Manik, R.K.Mishra, U.Ganguly, S.Lodha “Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium, 72nd Annual Device Research Conference (DRC), 2014.

• Ravi Kesh Mishra, Prashanth Paramahans Manik, Aneesh Nainani, Saurabh Lodha “Contacts to ntype Si/Ge/Si:C using rare earth metals,” MRS Fall Meeting & Exhibit, December 2013.

• R. K. Mishra, U. Ganguly, S. Ganguly, S. Lodha, A. Nainani and M. Abraham, “Nickel germanide with rare earth interlayers for Ge CMOS applications, “IEEE Conference of Electron Devices and Solid State Circuits” (EDSSC), 2013.

• P. Paramahans, S. Gupta, R. K. Mishra, N. Agarwal, A. Nainani, Y. Huang, M.C. Abraham, S. Kapadia, U. Ganguly, S. Lodha, “ZnO: an attractive option for n-type metal-interfacial layersemiconductor (Si, Ge, SiC) contacts, “Symposium on VLSI Techonolgy” (VLSIT), 2012.