Students

Swanands

Swanands

PhD (2014)

Faculty Advisors: Prof. Digbijoy N Nath, Prof. Srinivasan Raghavan, Prof. R Muralidharan
Education • M.Tech (VLSI Design & Embedded Systems), JULY 2009, National Institute of Technology, Rourkela, ODISHA • BE(Electronics), JULY 2005, Dr. BAM University, Aurangabad, MAHARASHTRA, HSC(Science), JUNE 2001, AURANGABAD Board Experience • Scientist, Defence Research And Development Organization, Ministry of Defence, India, JUNE 2009- AUG 2014. Research Area Electronics; GaN technology; Devices on 2D Materials; Nitrides; Photonics Publications • Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors, JAP, (Journal of Applied Physics 121, 164502 (2017); https://doi.org/10.1063/1.4982354) 2. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector, APL, (Appl. Phys. Lett. 110, 221107 (2017); https://doi.org/10.1063/1.4984904) 3. Design and Analysis of Novel Charge Pump Architecture for Phase Locked Loop, (S Solanke – 2009 – ethesis.nitrkl.ac.in) Research Area Gallery 2D materials, Group-III Nitride and 2D materials heterojunctions and photo detectors.