CORE FACULTY

Education
• Ph.D. from NUS Nanoscience and Nanotechnology Institute (NUSNNI), National University of Singapore (2014-2018).
• B.E. in Electrical Engineering from Bengal Engineering and Science University (BESU), Shibpur (2008-2012).

Experience
• Research Fellow at the Department of Physics, National University of Singapore (2019-2021)

Research Interests
• Design of brain inspired computing devices
• Electronic and ionic non-linear dynamics in molecular memristors
• Ultralow energy electrical switching devices
• Nano-optoelectronics using molecular thin films
• Low T transport in electronic devices
• In-situ Raman and absorption spectroscopy
• Heterostructures: oxide-molecular films, 2D-molecular films
• Magnetism in redox active transition metal complexes

Research Area
Artificial intelligence, Neuromorphic circuits, In-memory computing, Molecular electronics, Nanoelectronics, Nonlinear dynamics and chaos

Recent Publications

• Sharma, D., Rath, S. P., Kundu, B., Korkmaz, A., Thompson, D., Bhat, N., … & Goswami, S. (2024). Linear symmetric self-selecting 14-bit kinetic molecular memristors. Nature, 1-7.
  https://www.nature.com/articles/s41586-024-07902-2

• Williams, R. S., Goswami, S., & Goswami, S. (2024). Potential and challenges of computing with molecular materials. Nature Materials, 1-11.
  https://www.nature.com/articles/s41563-024-01820-4

• Rath, S. P., Thompson, D., Goswami, S., & Goswami, S. (2023). Many‐body molecular interactions in a memristor.Advanced Materials, 35(37), 2204551.
  https://doi.org/10.1002/adma.202204551

• Yi, S. I., Rath, S. P., Deepak, Venkatesan, T., Bhat, N., Goswami, S., … & Goswami, S. (2023). Energy and space efficient parallel adder using molecular memristors. Advanced Materials, 35(37), 2206128.
  https://doi.org/10.1002/adma.202206128

 

Key Publications (* from outside CeNSE)

• Goswami, S., Pramanick, R., Patra, A., Rath, S. P., Foltin, M., Ariando, A., … & Williams, R. S. (2021). Decision trees within a molecular memristor. Nature, 597(7874), 51-56. *
  https://www.nature.com/articles/s41586-021-03748-0

• Goswami, S., Rath, S. P., Thompson, D., Hedström, S., Annamalai, M., Pramanick, R., … & Venkatesan, T. (2020). Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. Nature nanotechnology, 15(5), 380-389. *
  https://www.nature.com/articles/s41565-020-0653-1

• Goswami, S., Matula, A. J., Rath, S. P., Hedström, S., Saha, S., Annamalai, M., … & Venkatesan, T. (2017). Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nature materials, 16(12), 1216-1224. *
  https://www.nature.com/articles/nmat5009

 

Patents
• Goswami, Sreetosh, et al. “Resistive memory devices based on metal coordinated redox active ligands.” U.S. Patent No. 10,984,859. 20 Apr. 2021.