CORE FACULTY

Education
• B.E. (Metallurgy) Visvesvaraya Regional Engineering College (Now VNIT), Nagpur, India
• M.E. (Metallurgy) Indian Institute of Science, Bangalore, India
• Ph.D. Materials Science and Engineering, The Pennsylvania State University, USA

Research Interests
• Growth of thin films and nanostructures
• In-situ stress-defect measurement and control
• Microstructure-electronic property correlations
• GaN, oxides and 2-D materials

Research Area
Thin Film growth, nano-structures and bulk crystals, Growth of group IIIA (Ga, In, Al) nitrides, oxides & 2d materials, Stress and defect structure evolution, Effects of stress on crystal properties and device performance.

Recent Publications

• Parate, S. K., Vura, S., Pal, S., Khandelwal, U., Sandilya Ventrapragada, R. S., Rai, R. K., … , Raghavan.S. & Nukala, P. (2024). Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100). Nature Communications, 15(1), 1428.
  https://www.nature.com/articles/s41467-024-45903-x

• Haque, A., Mandal, S. K., Jeyaseelan, A., Vura, S., Nukala, P., & Raghavan, S. (2024). Remote epitaxy-based atmospherically stable hybrid graphene template for fast and versatile transfer of complex ferroelectric oxides onto Si. Materials Today Electronics, 8, 100091.
  https://doi.org/10.1016/j.mtelec.2024.100091

• Mehta, M., Pattipati, Y., Singh, A. R., Ventrapragada, R. S. S., Vanjari, S. C., Kant, R., … S & Avasthi, S. (2024).  ACS Applied Electronic Materials, 6(3), 2084-2092.
  https://pubs.acs.org/doi/10.1021/acsaelm.4c00258

• Baby, R., Roy, S. K., Tripathy, S., Muralidharan, R., Basu, K., Raghavan, S., & Nath, D. N. (2024). Fabrication and Switching Performance of 8 A–500 VD‐Mode GaN MISHEMTs.physica status solidi (a), 221(13), 2300518.
  https://doi.org/10.1002/pssa.202300518

• Haque, A., D’Souza, H. J., Parate, S. K., Sandilya, R. S., Raghavan, S., & Nukala, P. (2024). Heterogeneous Integration of High Endurance Ferroelectric and Piezoelectric Epitaxial BaTiO3 Devices on Si. Advanced Functional Materials, 2413515.
  https://doi.org/10.1002/adfm.202413515

Key Publications

• Raghavan, S. (2011). Kinetic approach to dislocation bending in low-mobility films. Physical Review B—Condensed Matter and Materials Physics, 83(5), 052102.
  https://doi.org/10.1103/PhysRevB.83.052102

• Balasubramanian, K., Biswas, T., Ghosh, P., Suran, S., Mishra, A., Mishra, R., … & Raghavan, S. (2019). Reversible defect engineering in graphene grain boundaries. Nature communications, 10(1), 1090.
  https://www.nature.com/articles/s41467-019-09000-8

• Vura, S., Jeyaselvan, V., Biswas, R., Raghunathan, V., Selvaraja, S. K., & Raghavan, S. (2021). Epitaxial BaTiO3 on Si (100) with in-plane and out-of-plane polarization using a single TiN transition layer. ACS Applied Electronic Materials, 3(2), 687-695.
  https://doi.org/10.1021/acsaelm.0c00842