CORE FACULTY

TUSHAR SHARMA

TUSHAR SHARMA

Adjunct Faculty

Education
• PhD, University of Calgary
• Postdoctoral Research Associate, Princeton University

Experience
• Senior RF Engineer, NXP semiconductors,2018-2020
• Staff RF Engineer, Renesas Electronics, 2020-present

Research Interests
• Broadband, energy-efficient, and reconfigurable RF/mm-Wave/THz circuits and systems for beyond-5G and 6G communications,
• Load Modulated Tx architectures for 5G MIMO cellular infrastructure applications,
• Gallium Nitride semiconductor RF Power Transistors, Technology Characterization,
• Machine Learning based nonlinear modeling and predistortion of power amplifiers and wireless transmitters ,
• Terahertz power generation and beamforming using silicon ICs

Research Area
Power Amplifiers, RF Power Transistors, RF/mm-Wave ICs, Technology Characterization, GaN technology

Publications
• Z. Liu*, T. Sharma* and K. Sengupta, “80-110 GHz Broadband Linear PA with 33% peak PAE and Comparison of Stacked Common-Base and Common-Emitter PA in InP”, in IEEE Microwave Wireless Component Letters,2021

• X. Y. Zhou, W. S. Chan, T. Sharma, W. J. Jie and J. Xia, “Harnessing Harmonics in Doherty Power Amplifiers [Application Notes],” in IEEE Microwave Magazine, vol. 22, no. 8, pp. 16-31, Aug. 2021
Z. Liu*, T. Sharma*, C. Chappidi, S. Venkatesh, K. Sengupta, “42-62 GHz Transformer-based Broadband mmWave InP PA with Second Harmonic Waveform Engineering and Enhanced Linearity”, IEEE Transactions on Microwave Theory and Techniques, 2020

• S. Dhar, T. Sharma, N. Zhu, R. Darraji, D. G. Holmes, J. Staudinger, M. Helaoui, V. Mallette, and F. M. Ghannouchi, “Modeling of input nonlinearity and waveform engineered high efficiency class-F power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, 2020.

• C. Chappidi, T. Sharma and K. Sengupta, “Multi-port Active Load-pulling for mm-Wave 5G Power Amplifiers: Bandwidth, Back-off Efficiency and VSWR Tolerance,” in IEEE Transactions on Microwave Theory and Techniques,2020

• S. Dhar, T. Sharma, N. Zhu, R. Darraji, R. McLaren, D. G. Holmes, V. Mallette, and F. M. Ghannouchi, “Input harmonic controlled broadband continuous class F power amplifiers for Sub 6 GHz 5G applications,” IEEE Transactions on Microwave Theory and Techniques

• T. Sharma, J. Roberts, R. Darraji, D. G. Holmes, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “Simplified first-pass design of high-efficiency class-F−1 power amplifiers based on second-harmonic minima,” IEEE Transactions on Microwave Theory and Technique,2019

• T. Sharma, E. R. Srinidhi, R. Darraji, D. G. Holmes, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “High-efficiency input and output harmonically engineered power amplifiers,” IEEE Transactions on Microwave Theory and Techniques,2018

• T. Sharma, J. Roberts, R. Darraji, D. G. Holmes, J. K. Jones, and F. M. Ghannouchi, “Novel integrated class-F power amplifier design for RF power infrastructure applications,” IEEE Access, 2018

• T. Sharma, P. Aflaki, M. Helaoui and F. M. Ghannouchi, “Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications,” in IEEE Access, 2018

• T. Sharma, E. R. Srinidhi, D. G. Holmes, R. Darraji, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “On the double-inflection characteristic of the continuous-wave AM/AM in class F-1 power amplifiers,” IEEE Microwave Wireless and Components Letters, 2018

• T. Sharma, D. G. Holmes, R. Darraji, E. R. Srinidhi, J. Staudinger, J. K. Jones, and F. M. Ghannouchi, “On the second-harmonic null in design space of power amplifiers,” IEEE Microwave Wireless and Components Letters, 2018

Patents
• Three Way Combined RF Power Amplifier Architecture

• Load Modulated Balanced Power Amplifier Integrated Circuits Including Transformer Based Hybrid Splitter/Combiner Circuits

• Hybrid power amplifier circuit or system with combination low-pass and high-pass interstage circuitry and method of operating the same.

• Gallium Nitride (GaN) power amplifier RF device with input output harmonic termination for power density enhancement

Conference and Seminars
• T. Sharma, N.Zhu, J. Roberts and D.G. Holmes, “Novel Continuous Inverse Class F Power Amplifier for High Power 5G Macro Base Station”, in IEEE MTT- International Microwave Symposium (IMS),2021 [Best Industry Paper Award]

• T. Sharma*, Z. Liu* and K. Sengupta, “80-110 GHz Broadband Linear PA with 33% peak PAE and Comparison of Stacked Common-Base and Common-Emitter PA in InP”, in IEEE MTT- International Microwave Symposium (IMS),2021 [Best Student Paper Award]

• T. Sharma, Z. Liu, C. Chappidi and K. Sengupta “ Broadband PA Architectures with Asymmetrical Combining and Stacked PA cells across 50-70 GHz and 64-110 GHz in 250 nm InP”, IEEE MTT- International Microwave Symposium (IMS),2020S.R. Embar, T.Sharma et.al, “Digitally Assisted Load Modulated Balanced Amplifier for High Power Base Station Application”, in IEEE MTT- International Microwave Symposium (IMS), 2020 [Nominated Best Industry Paper Award]

• S. Dhar, T. Sharma, R. Darraji, D. G. Holmes, J. Staudinger, X. Zhou, V. Malette, and F. M. Ghannouchi, “Impact of input nonlinearity on efficiency, power, and linearity performance of GaN RF power amplifiers,” in IEEE MTT- International Microwave Symposium (IMS), 2020 [Nominated Best Student Paper Award]

• C. Chappidi,T. Sharma and K. Sengupta,” Load Modulated Balanced mm-Wave CMOS PA with Integrated Linearity Enhancement for 5G applications,” in IEEE MTT- International Microwave Symposium (IMS), 2020 [Best Student Paper Award]

• H. Saiedi, S.Venkatesh, T.Sharma, C.Chappidi and K. Sengupta, “A 4×4 Distributed Multi-Layer Oscillator Network for Harmonic Injection and THz Beamforming with 14 dBm EIRP at 416 GHz in a Lensless 65nm CMOS IC”, in IEEE International Solid-State Circuits Conference (ISSCC) 2020

• T. Sharma, R. Darraji, D. G. Holmes, J. Jones, and F. M. Ghannouchi, “On the efficiency and AM/AM flatness of inverse class-F power amplifiers,” in 2019 IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 460–463, Jun. 2019.

• T. Sharma, R. Darraji, S. Dhar, D. G. Holmes, J. Jones, and F. M. Ghannouchi, “Novel high efficiency power amplifier mode using open circuit harmonic loading,” in 2019 IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 79–82, Jun. 2019.

• S. Dhar, T. Sharma, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Comprehensive analysis of input waveform shaping for efficiency enhancement in class-B power amplifiers,” in IEEE MTT-S International Microwave Symposium (IMS’2019), Boston, MA, USA, pp. 1164–1167, Jun. 2019.

• T. Sharma, R. Embar, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Input harmonic sensitivity in high-efficiency GaN power amplifiers,” in IEEE MTT-S International Microwave Symposium (IMS’2018), Philadelphia, PA, USA, pp. 461–464, Jun. 2018.

• T. Sharma, R. Embar, D. G. Holmes, R. Darraji, J. Jones, and F. M. Ghannouchi, “Harmonically engineered and efficiency enhanced power amplifier design for P3dB/back-off applications,” in IEEE MTT-S International Microwave Symposium (IMS’2017), Honolulu, HI, USA, pp. 798–792, Jun. 2017.