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Growth Mechanism and Carrier Transport in Hole-Blocking TiO$_2$/Silicon Heterojunctions
Sushobhan Avasthi
,
William E. McClain
,
Gabriel Man
,
Janam Jhaveri
,
Ken A. Nagamatsu
,
Antoine Kahn
,
Jefferey Schwartz
,
James C. Sturm
Mar 1, 2014
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Type
Presentations
Date
March, 2014
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Effect of Annealing on Stability of Low Interface Recombination Velocity at TiO$_2$/p-Silicon Interface
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Hole-Blocking Metal-Oxide/Crystalline-Silicon Heterojunctions with Recombination Velocity of $<$ 100 cm/s
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