Stable low-recombination n-Si/TiO2 hole-blocking interface and its effect on silicon heterojunction photovoltaics

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DOI
Type
Conference Proceedings
Publication
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Date
electrochemical electrodes;elemental semiconductors;minority carriers;silicon;solar cells;titanium compounds;Si;Si-TiO2;back surface field;cathode;cathode contact;diffused n+-n layer;double heterojunction crystalline silicon solar cell;electron transparent heterojunction;low-recombination hole-blocking interface;minority carrier recombination velocity;power conversion efficiency;temperature 293 K to 298 K;velocity recombination;Annealing;Anodes;Cathodes;Equations;Mathematical model;Silicon;Spontaneous emission;heterojunction;photovoltaic cells;silicon;titanium oxide
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