Prof. Srinivasan Raghavan's

Crystal Growth Group

Announcements & Notice

Prof. Srinivasan Raghavan has been conferred with the Abdul Kalam Technology Innovation National Fellowship in Financial Year 2020-21, for his proposal on “Beyond AlGaN-GaN High Electron Mobility Transistors for Power and RF Electronics: ScAlN Technology Development for RF Filters and Nitride Electronics”.
Indian National Academy of Engineering (INAE) awards the Abdul Kalam Technology Innovation National Fellowships to outstanding engineers to recognize, encourage and support translational research by individuals to achieve excellence in engineering, innovation and technology development.

2-D Materials

Hexagonal Boron Nitride
Molybdenum Disulfide
Tungsten Disulfide


Aluminium Nitride
Gallium Nitride
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Barium Titanante
Gallium Oxide
Lead zirconate titanate
Magnesium oxide
Titanium Nitride
Vanadium(IV) oxide