M.Tech., National Institute of Technology, Silchar
B.E., BMS College of Engineering, Bangalore
Experience:
1 year internship at NXP India Pvt. Ltd., Bangalore (August 2020 to June 2021)
Publications
Dayananda Khwairakpam, Puspa Pukhrambam, “Sensitivity optimization of a double-gated ISFET pH-sensor with HfO2/SiO2 gate dielectric stack”, Microelectronics J, 118:105282, 2021, https://doi.org/10.1016/j.mejo.2021.105282.
Dayananda Khwairakpam, Puspa Pukhrambam & Vandana Wangkheirakpam, “Device Physics Based Analytical Modeling and Simulation Study of Electrical Characteristics of ISFET pH-sensor”, Silicon, 2022, https://doi.org/10.1007/s12633-021-01555-w.
