Neha Mohta, Sooraj Sanjay, Roop Mech, R Muralidharan and Digbijoy N Nath, “Artificial Synapse based on back-gated MoS2 FET with high-k Ta2O5 dielectric”, Early Access, Physica Status Solidi A, 2020, DOI: 10.1002/pssa.202000254
Nayana Remesh, N Mohan, S Raghavan, R Muralidharan and Digbijoy N Nath, “Optimum carbon concentration in GaN-on-silicon for breakdown enhancement in AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, Vol 67, Issue 6, 2311-2317, 2020
Niranjan S., I Guiney, C. J. Humphreys, P Sen, R Muralidhara and Digbijoy N Nath, “Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: study of etch chemistry and metal scheme”, Journal of Vacuum Science & Technology B, Vol. 38, April 2020, pp. 032207
Sandeep Kumar, SB Dolmanan, S Tripathy, R Muralidharan and Digbijoy N Nath, “Deep sub-micron normally-off AlGaN/GaN MOSFET on silicon with V TH > 5V and On Current > 0.5 A/mm”, Physica Status Solidi (A), vol. 217, no. 7, December 2019, Early Access
Usman Muazzam, Prasad Chavan, S. Raghavan, R. Muralidharan and Digbijoy N. Nath, “Optical properties of mist-CVD grown α-Ga2O3”, IEEE Photonics Technology Letters, vol. 32, No. 7, April 2020, pp. 422-425
Sandeep Kumar, Rohith Soman, Anamika Pratiyush, R. Muralidharan and Digbijoy N. Nath, “A performance comparison between β-Ga2O3 and GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 66, no. 8, July 2019, pp. 3310-3317
Anisha Kalra, Shashwat Rathkanthiwar, R. Muralidharan, Srinivasan Raghavan and Digbijoy N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency”, IEEE Photonics Technology Letters, vol. 31, no. 15, June 2019, pp. 1237-1240
Swanand Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Roop Kumar Mech, Muralidharan Rangarajan, Srinivasan Raghavan and Digbijoy N Nath, “Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN”, IOP Semiconductor Science and Technology, Vol. 34, no. 7, June 2019, pp. 075020
A. S. Pratiyush, S. Krishnamoorthy, S. V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, Digbijoy N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector”, Applied Physics Letters, vol. 110, no. 22, May 2017, pp. 221107
S. Rathkanthiwar, A. Kalra, S V Solanke, N Mohta, R Muralidharan, S Raghavan, Digbijoy N. Nath, “Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors”, Journal of Applied Physics, vol. 121 no. 16, April 2017, pp.164502
