Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Digbijoy N. Nath

Publications

  • Sandeep Kumar, Nayana Remesh, SB Dolmanan, S Tripathy, S Raghavan, R Muralidharan, Digbijoy N Nath, “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, (2017).
  • Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush, Nagabhoopathy Mohan, Srinivasan Raghavan, R Muralidharan, SA Shivashankar, Digbijoy N Nath, “Microwave Irradiation Assisted Deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics”, arXiv preprint arXiv:1710.09615, (2017).
  • Sandeep Kumar, Priti Gupta, Ivor Guiney, Colin J Humphreys, Srinivasan Raghavan, R Muralidharan, Digbijoy N Nath, “Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer”, IEEE Transactions on Electron Devices, (2017).
  • Shashwat Rathkanthiwar, Anisha Kalra, Swanand V Solanke, Neha Mohta, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N Nath, “Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors”, Journal of Applied Physics, (2017).
  • Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Digbijoy N Nath, Navakanta Bhat, “Surface State Engineering of Metal/MoS 2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability”, Surface State Engineering, (2016).
  • B Krishna Bharadwaj, Hareesh Chandrasekar, Digbijoy Nath, Rudra Pratap, Srinivasan Raghavan ,” Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, (2016).
  • Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Digbijoy N Nath, Navakanta Bhat, “Sulfur treatment for schottky barrier reduction in metal/MoS2 contacts: A new proposal for contact engineering on TMDs”, arXiv preprint arXiv:1508.03795, (2015).
  • Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N Nath, Jacob B Khurgin, Siddharth Rajan, “Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors”, Device Research Conference (DRC), 2015 73rd Annual, (2015).
  • Digbijoy N Nath, Lu Ma, Chong Hee Lee, Edwin Lee, Aaron Arehart, Yiying Wu, Siddharth Rajan, “Electron transport in large-area epitaxial MoS2”, Device Research Conference (DRC), 2014 72nd Annual, Device Research Conference (DRC), 2014 72nd Annual, (2014).
  • D. N. Nath, Z. C. Yang., C.-Y. Lee, P. S. Park, Y.-R. Wu, S. Rajan, “Unipolar vertical transport in GaN/AlGaN/GaN heterostructures”, Applied Physics Letters, (2013).
  • Digbijoy N Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh K Mishra, Siddharth Rajan, “Polarization engineered 1-dimensional electron gas arrays”, Journal of Applied Physics, (2012).
  • Digbijoy Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh Mishra, Siddharth Rajan, “Electrostatic tuning between 1-dimensional and 2-dimensional electron gases”, APS Meeting Abstracts, (2012).
  • Digbijoy Nath, Pil Sung Park, Michele Esposto, David Brown, Stacia Keller, Umesh Mishra, Siddharth Rajan, “Lateral Confinement of Electrons and Quasi-1 D Channels Based Devices”, Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun, (2011).
  • Digbijoy N Nath, Stacia Keller, Eric Hsieh, Steven P DenBaars, Umesh K Mishra, Siddharth Rajan, “Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure”, Applied Physics Letters, (2010).