Sorry, you need to enable JavaScript to visit this website. | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Digbijoy N. Nath

Research Interests

  • Wide band gap materials and devices, including Gallium nitride based transistors for power switching and RF applications
  • Deep-UV photodetectors based on III-nitrides, gallium oxide and their heterojunctions
  • 2D layered materials for memristive and synaptic devices


  • Neha Mohta, Sooraj Sanjay, Roop Mech, R Muralidharan and Digbijoy N Nath, “Artificial Synapse based on back-gated MoS2 FET with high-k Ta2O5 dielectric”, Early Access, Physica Status Solidi A, 2020, DOI: 10.1002/pssa.202000254
  • Nayana Remesh, N Mohan, S Raghavan, R Muralidharan and Digbijoy N Nath, “Optimum carbon concentration in GaN-on-silicon for breakdown enhancement in AlGaN/GaN HEMTs”, IEEE Transactions on Electron Devices, Vol 67, Issue 6, 2311-2317, 2020
  • Niranjan S., I Guiney, C. J. Humphreys, P Sen, R Muralidhara and Digbijoy N Nath, “Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: study of etch chemistry and metal scheme”, Journal of Vacuum Science & Technology B, Vol. 38, April 2020, pp. 032207
  • Sandeep Kumar, SB Dolmanan, S Tripathy, R Muralidharan and Digbijoy N Nath, “Deep sub-micron normally-off AlGaN/GaN MOSFET on silicon with V TH > 5V and On Current > 0.5 A/mm”, Physica Status Solidi (A), vol. 217, no. 7, December 2019, Early Access
  • Usman Muazzam, Prasad Chavan, S. Raghavan, R. Muralidharan and Digbijoy N. Nath, “Optical properties of mist-CVD grown α-Ga2O3”, IEEE Photonics Technology Letters, vol. 32, No. 7, April 2020, pp. 422-425
  • Sandeep Kumar, Rohith Soman, Anamika Pratiyush, R. Muralidharan and Digbijoy N. Nath, “A performance comparison between β-Ga2O3 and GaN HEMTs”, IEEE Transactions on Electron Devices, vol. 66, no. 8, July 2019, pp. 3310-3317
  • Anisha Kalra, Shashwat Rathkanthiwar, R. Muralidharan, Srinivasan Raghavan and Digbijoy N. Nath, “Polarization-graded AlGaN solar-blind p-i-n detector with 92% zero-bias external quantum efficiency”, IEEE Photonics Technology Letters, vol. 31, no. 15, June 2019, pp. 1237-1240
  • Swanand Solanke, Shashwat Rathkanthiwar, Anisha Kalra, Roop Kumar Mech, Muralidharan Rangarajan, Srinivasan Raghavan and Digbijoy N Nath, “Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS2/GaN and β-In2Se3/GaN”, IOP Semiconductor Science and Technology, Vol. 34, no. 7, June 2019, pp. 075020
  • A. S. Pratiyush, S. Krishnamoorthy, S. V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, Digbijoy N. Nath, “High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector”, Applied Physics Letters, vol. 110, no. 22, May 2017, pp. 221107
  • S. Rathkanthiwar, A. Kalra, S V Solanke, N Mohta, R Muralidharan, S Raghavan, Digbijoy N. Nath, “Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors”, Journal of Applied Physics, vol. 121 no. 16, April 2017, pp.164502