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Navakanta Bhat

Research Interests

  • Nanoelectronics device physics and technology
  • Electrochemical Biosensors
  • Metal oxide gas sensors
  • Novel materials and processes for CMOS and MEMS applications


  • Hareesh Chandrasekar, KN Bhat, Muralidharan Rangarajan, Srinivasan Raghavan, Navakanta Bhat, “Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces”,Scientific reports, (2017).
  • Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Sangeneni Mohan, Navakanta Bhat,” A sub-thermionic MoS2 FET with tunable transport”, Applied Physics Letters, (2017).
  • Bhawani Shankar, Rudrarup Sengupta, Sayak Dutta Gupta, Ankit Soni, Nagaboopathy Mohan, Navakanta Bhat, Srinivasan Raghavan, Mayank Shrivastava, “On the ESD behavior of AlGaN/GaN schottky diodes and trap assisted failure mechanism”, Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2017 39th, (2017).
  • Samatha Benedict, Navakanta Bhat, “Plasma Oxidized W-WOx Sensor for Sub-ppm H2S Detection”, Multidisciplinary Digital Publishing Institute Proceedings, (2017).
  • Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Navakanta Bhat ,”Realizing P-FETs and photodiodes on MoS 2 through area-selective p-doping via vacancy engineering”, Device Research Conference (DRC), 2017 75th Annual, (2017).
  • CS Prajapati, Dennis Visser, Srinivasan Anand, Navakanta Bhat, “Honeycomb type ZnO nanostructures for sensitive and selective CO detection”, Sensors and Actuators B: Chemical, (2017).
  • Saloni Chaurasia, Prosenjit Sen, Navakanta Bhat,”Using dielectric droplets to improve sensitivity of capacitive sensors suitable for tactile sensing” , Nano/Micro Engineered and Molecular Systems (NEMS), 2017 IEEE 12th International Conference, (2017).
  • Chandra Shekhar Prajapati, Rohith Soman, SB Rudraswamy, Manjunatha Nayak, Navakanta Bhat,”Single Chip Gas Sensor Array for Air Quality Monitoring”, Journal of Microelectromechanical Systems, (2017).
  • Palash Kumar Basu, Samatha Benedict, Sangeeth Kallat, Navakanta Bhat, “A suspended low power gas sensor with in-plane heater”, Journal of Microelectromechanical Systems, (2017).
  • Navakanta Bhat, SA Shivashankar, KN Bhat, “Nanoelectronics: Devices and Materials”, (2016).
  • Suraj Hebbar, Vinay Kumar, MS Bhat, Navakanta Bhat, “Handheld electrochemical workstation for serum albumin measurement”, Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER), IEEE, (2016).
  • Navakanta Bhat, “CMOS MEMS Integration”, Materials and Failures in MEMS and NEMS, (2015).
  • Navakanta Bhat, Rudra Pratap, Malhi Charanjeet Kaur, "Sub-threshold forced plate FET sensor for sensing inertial displacements, a method and system thereof”, (2013).
  • Navakanta Bhat, Balaji Jayaraman, SA Shivashankar, Rudra Pratap,”’Sub-Threshold Capfet Sensor for Sensing Analyte, A Method and System Thereof”, (2008)
  • Navakanta Bhat, Krishna C Saraswat, “Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry”, Journal of applied physics, (1998).
  • Navakanta Bhat, Min Cao, Krishna C Saraswat,” Bias temperature instability in hydrogenated thin-film transistors”, IEEE Transactions on Electron Devices, (1997).


  • N. Bhat, K N Bhat, V T Arun, “Modification of Fermi-level pinning behaviour at the Germanium surface through sulfur passivation treatment” , Indian Patent filed.
  • B. Amrutur, N. Bhat, “Large Flexible Surfaces with an Embedded, Dense, Sensing and Actuation Network for Bio-Electronic applications” Indian and US Patent filed.
  • B. Amrutur, N. Bhat, S. Dwivedi, “Adaptive Digital Baseband Receiver” , Indian Patent Filed, 2596/CHE/2009 , October 2009.
  • N. Bhat, Balaji Jayaraman, S.A.Shivashankar, Rudra Pratap, “A sub-threshold Cap-FETsensor for sensing analyte, a method and system thereof” Indian Patent Application Number: 906/CHE/2007, International PCT Application Number: PCT/IN2008/000385.
  • N. Bhat, Thejas, Rudra Pratap, “A sub-threshold Forced plate-FET sensor for sensing inertial displacements, a method and system thereof”, Indian Patent Application Number: 907/CHE/2007.
  • International PCT Application Number: PCT/IN2008/000386.
  • N. Bhat, C. Malhi, Rudra Pratap, “A sub-threshold Elastic deflection-FET sensor for sensing pressure/force, a method and system thereof”, Indian Patent Application Number: 929/CHE/2007, International PCT Application Number: PCT/IN2008/000387.
  • N. Bhat and Rakesh Gnana David J., “An adaptive keeper circuit to control domino logic dynamic circuits using rate sensing technique”, Patent filed, International application PCT/IN2007/000259, Indian Patent No.01130/CHE/2007.
  • N. Bhat and S. Mukherjee, “Yield and Speed Enhancement of Semiconductor Integrated Circuits using Post Fabrication Transistor Mismatch Compensation Circuitry”, US patent #6934200.
  • P. Tsui, H. Tseng, N. Bhat and P. Chen, “Method for making a dual thickness gate oxide layer using a nitride/oxide composite region”, US patent #5960289.
  • P. Chen, N. Bhat, D. Pham, P. Tsui, “Process for forming semiconductor device with thick and thin films,” US Patent #6,261,978.

Conference and Seminars

  • Kausik Majumdar, Kota V. R. M. Murali, N. Bhat, Fengnian Xia and Yu-Ming Lin, “High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors”, IEDM 2010.
  • B.P. Harish, N. Bhat, and Mahesh B. Patil, “Bridging Technology-CAD and Design-CAD for Variability Aware Nano-CMOS Circuits”, Invited talk at IEEE International Symposium on Circuits and Systems, VOLS 1-5 Pages: 2309-2312, 2009.
  • AdityaSankar Medury, N. Bhat and K.N.Bhat “Modeling theThreshold Voltage of Ultra-Thin-Body(UTB) Long Channel Symmetric Double-Gate (DG) MOSFETs” International Semiconductor Device Research Symposium(ISDRS), Dec 2009.
  • N. Bhat, B. Jayaraman, R. Pratap, S. Bagga, S. Mohan, “Integrated CMOS Gas Sensor System”, Invited talk at the International conference on Electron Devices and Semiconductor Technology (IEDST), 2009.
  • C. Malhi, R. Pratap, N. Bhat, “High Sensitivity FET Integrated MEMS Deflection Sensor”, IEEE Sensors 2009.