S. Gupta, P. Paramahans Manik, Ravi Kesh Mishra, A. Nainani, M. C. Abraham and S. Lodha, “Contact resistivity reduction through interfacial layer doping in metal-interfacial layer - semiconductor contacts,” Journal of Applied Physics, vol. 113, pp. 234505, 2013.
Prashanth Paramahans Manik, Ravi Kesh Mishra, V. Pavan Kishore, Prasenjit Ray, Aneesh Nainani, YiChiau Huang, Mathew C. Abraham, Udayan Ganguly and Saurabh Lodha, “Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer, ” Applied Physics Letters, vol. 101, pp. 182105, 2012.
Conference and Seminars
P.P.Manik, R.K.Mishra, U.Ganguly, S.Lodha “Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium, 72nd Annual Device Research Conference (DRC), 2014.
Ravi Kesh Mishra, Prashanth Paramahans Manik, Aneesh Nainani, Saurabh Lodha “Contacts to ntype Si/Ge/Si:C using rare earth metals,” MRS Fall Meeting & Exhibit, December 2013.
R. K. Mishra, U. Ganguly, S. Ganguly, S. Lodha, A. Nainani and M. Abraham, “Nickel germanide with rare earth interlayers for Ge CMOS applications, "IEEE Conference of Electron Devices and Solid State Circuits" (EDSSC), 2013.
P. Paramahans, S. Gupta, R. K. Mishra, N. Agarwal, A. Nainani, Y. Huang, M.C. Abraham, S. Kapadia, U. Ganguly, S. Lodha, “ZnO: an attractive option for n-type metal-interfacial layersemiconductor (Si, Ge, SiC) contacts, "Symposium on VLSI Techonolgy" (VLSIT), 2012.
