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Sreetosh Goswami

Research Interests

  • Design of brain inspired computing devices
  • Electronic and ionic non-linear dynamics in molecular memristors
  • Ultralow energy electrical switching devices
  • Nano-optoelectronics using molecular thin films
  • Low T transport in electronic devices
  • In-situ Raman and absorption spectroscopy
  • Heterostructures: oxide-molecular films,  2D-molecular films
  • Magnetism in redox active transition metal complexes

Publications

  • Sreetosh Goswami*, Rajib Pramanick, Abhijeet Patra, et.al. “Decision Trees within a Molecular Memristor”, Nature, 2021, 597, 51–56
  • Sreetosh Goswami*, Santi. P. Rath, Damien Thompson, et.al.  “Charge disproportionate molecular redox for discrete memristive and memcapacitive switching”, Nature Nanotechnology, 2020, 15, 380-389
  • Sreetosh Goswami, Adam J Matula, Santi P Rath, et.al. “Robust resistive memory devices using solution-processable metal-coordinated azo aromatics”, Nature Materials, 2017, 16, 1216–1224
  • Sreetosh Goswami*, Debalina Deb, Agnès Tempez, et.al. “Nanometer-Scale Uniform Conductance Switching in Molecular Memristors”, Advanced Materials, 2020, 32 (42), 2004370
  • Sreetosh Goswami*, Sreebrata Goswami* and T Venkatesan*. “An Organic Approach to Low Energy Memory and Brain Inspired Electronics”, Applied Physics Review, 2020, 7, 021303
  • Sreetosh Goswami*, Damien Thompson, R Stanley Williams, et.al. “Colossal current and voltage tunability in an organic memristor via electrode engineering”, Applied Materials Today, 2020, 19, 100626
  • Debabrata Sengupta #, Sreetosh Goswami#*, Rajdeep Banerjee et.al. Size-selective Pt siderophores based on redox-active π-acceptor ligands”, Chemical Science, 2020, 11.34: 9226-9236
  • Sreetosh Goswami*, Debabrata Sengupta, Nanda D Paul et.al. “Redox Non‐Innocence of Coordinated 2‐(Arylazo) Pyridines in Iridium Complexes: Characterization of Redox Series and an Insight into Voltage‐Induced Current Characteristics”, Chemistry–A European Journal, 2014, 20(20), 6103-6111
  • Nanda D Paul, Utpal Rana, Sreetosh Goswami et.al. Azo Anion “Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current–Voltage Characteristics”, Journal of the American Chemical Society, 2012, 134(15), 6520-6523

Patents

  • Goswami, Sreetosh, et al. "Resistive memory devices based on metal coordinated redox active ligands." U.S. Patent No. 10,984,859. 20 Apr. 2021.

Conference and Seminars

  • Graduate student award seminar, Materials Research Society, Spring Meeting, Phoenix, 2017
  • Graduate student award seminar, European Materials Research Society, Fall Meeting, Warsaw, Poland, 2018
  • Invited talk: European MRS, Fall Meeting, Warsaw, Poland, 2019, Organic memristors: from blue sky research to commercially competitive devices.
  • Invited talk: European MRS, Fall Meeting, Warsaw, Poland, 2019, In-operando Tracking of Molecular Mechanism in Organic devices.
  • Invited talk: MEMRYSIS, Technical University Dresden, GermanyA Molecular Memristor for Probabilistic Computing, 2019,