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Srinivasan Raghavan

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Conference and Seminars

  • J. M. Redwing, A. Pogrebnyakov, Srinivasan Raghavan, J. E. Jones, X. X. Xi, S. Y. Xu, Q. Li, Z. K. Liu, V. Vaithyanathan, D. G. Schlom, “Epitaxial Growth of MgB2 Thin Films by Hybrid Physical-Chemical Vapor Deposition,” MRS symposium proceedings, v. EXS,n. 3 Frontiers in Superconducting Materials-New Materials and Applications, 2004, p153-155.
  • X. Weng, Srinivasan Raghavan, S. Dickey and J. M. Redwing, “Stress and Microstructure Evolution in compositionally graded AlGaN buffer for GaN growth on Si,” MRS symp. Proceedings, V. 892, GaN, AlN, InN and related materials, 2006, p27-32.

     

Publications

  • Srinivasan Raghavan and Joan M. Redwing, “Growth Stresses and Cracking in MOCVD GaN films on (111) Si: Part I, AlN Buffer Layers,” Journal of Applied Physics, 98, 023514, 2005. Presented at the 19th Conference on Crystal Growth and Epitaxy, AACGE/West, Lake Tahoe.
  • Srinivasan Raghavan and Joan M. Redwing, “Growth Stresses and Cracking in MOCVD GaN films on (111) Si: Part II, Graded AlGaN Buffer Layers,” Journal of Applied Physics, 98, 023515, 2005. Presented at the 2004 MRS Fall Meeting, Boston.
  • Srinivasan Raghavan, Jeremy Acord and Joan M. Redwing,”Direct Evidence for Tensile Stresses due to Coalescence During Growth of GaN on Sapphire Using a 600 C AlN buffer layer,” Applied Physics Letters, 86, 261907, 2005.
  • Srinivasan Raghavan and Joan M. Redwing, “Effect of AlN interlayers on growth stresses in GaN films grown on (111) Si by MOCVD,” Applied Physics Letters, 87, 142101, 2005. Presented at the 16 th American Conference on Crystal Growth and Epitaxy, Big Sky Resort.
  • Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey and Joan M. Redwing, “Growth Stress and TEM Studies of Structural Evolution During Metal Organic Chemical Vapor Deposition of GaN on (111) Si Using Graded AlGaN Buffer Layers,” Applied Physics Letters,05/2005.
  • Srinivasan Raghavan, Hsin Wang, Wallace G. Porter, Ralph B. Dinwiddie and Merrilea J. Mayo, “The Effect of Grain Size, Porosity and Yttria Content on the Thermal Conductivity of nanocrystalline Zirconia,” Scripta Materialia, 1998, 39[8],1119-1125. Presented at the 101st Annual Convention of the American Ceramic Society, Indianapolis.
  • Srinivasan Raghavan, Hsin Wang, Wallace G. Porter, Ralph B. Dinwiddie and Merrilea J. Mayo, “Thermal Properties of Trivalent and Pentavalent Co-doped Zirconia,” Acta Materialia, 2001, 49[1], 169-179.
  • Srinivasan Raghavan and Merrilea J. Mayo, “The Hot Corrosion Resistance of 20 mol % YTaO4 Stabilized Tetragonal Zirconia and 14 mol % Ta2O5 Stabilized Orthorhombic Zirconia for Thermal Barrier Coating Applications,” Surface and Coating Technology, 2002, 160, 187-196. Presented at the 103rd Annual Convention of the American Ceramic Society, Indianapolis.
  • Srinivasan Raghavan, Hsin Wang, Wallace G. Porter, Ralph B. Dinwiddie, Robert Vassen and Merrilea J. Mayo, “20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings,”- Journal of The American Ceramic Society, 87 [3] 431-37 (2004). Presented at the 102nd Annual Convention of the American Ceramic Society, St. Louis.
  • Srinivasan Raghavan and Joan M. Redwing,” Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates,” Journal of Applied Physics, 2004, 96, 2995-3003.
  • Srinivasan Raghavan and Joan M. Redwing, “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates,” Journal of Crystal Growth, 2004, 261, 294-300. Presented at the 15th American Conference on Crystal Growth and Epitaxy, Keystone.
  • Abhishek Jain, Srinivasan Raghavan and Joan M. Redwing, “Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates,” Journal of Crystal Growth, 2004, 269, 128-133.
  • Srinivasan Raghavan and Joan M. Redwing,” Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates,” Journal of Applied Physics, 2004, 96, 2995-3003.
  • Jeremy D. Acord, Srinivasan Raghavan, David W. Snyder and Joan M. Redwing, “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC,” , Journal of Crystal Growth, 2004, 272, 65-71.
  • A. Pogrebnyakov, J. M. Redwing, Srinivasan Raghavan, V. Vaithyanathan, D. G. Schlom, S. Y. Xu, Q. Li, D. A. Tenne, A. Soukiassian, X. X. Xi, M. D. Johannes, D. Kasinathan, W. E. Pickett, J. S. Wu, J. C. H. Spence, “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening,” Physical Review Letters, 2004, 93[14], 147006-1-4. Presented at the 2003 MRS Fall Meeting, Boston.
  • Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey and Joan M. Redwing, “Correlation of Growth Stress and Structural Evolution During MOCVD of GaN on (111) Si,” Applied Physics Letters, 88, 41904, 2006.
  • Xiaojun Weng, Srinivasan Raghavan, J. Acord, A. Jain, E. Dickey and J. M. Redwing, “Evolution of Threading Dislocations in MOCVD-Grown GaN films on Si,” Journal of Crystal Growth, 2007, 300, 217-222.
  • B. Sheldon, A. Bhandari, A. Bower, Srinivasan Raghavan and J. M. Redwing, “Steady State Tensile Stresses During Growth of Polycrystalline Films,” Acta. Materialia. , Accepted for Publication, May, 2007.